RF1S70N03SM MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RF1S70N03SM

Type of RF1S70N03SM transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 70

Maximum junction temperature (Tj), °C: 150

Rise Time of RF1S70N03SM transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.01

Package:

Equivalent transistors for RF1S70N03SM

RF1S70N03SM PDF documents for downloads:

2.1. rfg70n06_rfp70n06_rf1s70n06_rf1s70n06sm.pdf Size:230K _fairchild_semi

See also transistors datasheet: RF1S4N100SM , RF1S50N06LESM , RF1S50N06SM , RF1S530SM , RF1S540SM , RF1S60P03SM , RF1S630SM , RF1S640SM , IRF9540N , RF1S70N06SM , RF1S9530SM , RF1S9540SM , RF1S9630SM , RF1S9640SM , RFB18N10CS , RFD10P03L , RFD10P03LSM .

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