RFG50N05L MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RFG50N05L

Type of RFG50N05L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C: 150

Rise Time of RFG50N05L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.022

Package:

Equivalent transistors for RFG50N05L

RFG50N05L PDF documents for downloads:

3.1. rfg50n06_rfp50n06_rf1s50n06sm.pdf Size:375K _fairchild_semi

See also transistors datasheet: RFF60P06 , RFF70N06 , RFG30P05 , RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , BF245A , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L .

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