RFG60P03 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RFG60P03

Type of RFG60P03 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 60

Maximum junction temperature (Tj), °C: 150

Rise Time of RFG60P03 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.027

Package:

Equivalent transistors for RFG60P03

RFG60P03 PDF documents for downloads:

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See also transistors datasheet: RFG30P06 , RFG40N10 , RFG40N10LE , RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , 2N5484 , RFG60P05E , RFG60P06E , RFG70N06 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L .

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