RFG70N06 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: RFG70N06

Type of RFG70N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 70

Maximum junction temperature (Tj), °C: 150

Rise Time of RFG70N06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.014

Package:

Equivalent transistors for RFG70N06

RFG70N06 PDF documents for downloads:

1.1. rfg70n06_rfp70n06_rf1s70n06_rf1s70n06sm.pdf Size:230K _fairchild_semi

See also transistors datasheet: RFG45N06 , RFG45N06LE , RFG50N05L , RFG50N06 , RFG50N06LE , RFG60P03 , RFG60P05E , RFG60P06E , 2SK956 , RFG75N05E , RFL1N10L , RFP10P03L , RFP12N06RLE , RFP12N10L , RFP12P08 , RFP12P10 , RFP14N05 .

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