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RFP40N10LE MOSFET (IC) Datasheet. Cross Reference Search. RFP40N10LE Equivalent

Type Designator: RFP40N10LE

Type of RFP40N10LE transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 40

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP40N10LE transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.04

Package: TO220AB

RFP40N10LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP40N10LE PDF doc:

1.1. rfg40n10le_rfp40n10le_rf1s40n10lesm.pdf Size:410K _intersil

RFP40N10LE
RFP40N10LE

RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 File Number 4061.5 40A, 100V, 0.040 Ohm, Logic Level Features N-Channel Power MOSFETs • 40A, 100V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.040Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes appr

2.1. rfg40n10_rfp40n10_rf1s40n10-sm.pdf Size:369K _fairchild_semi

RFP40N10LE
RFP40N10LE

RFG40N10, RFP40N10, RF1S40N10, RF1S40N10SM Data Sheet January 2002 40A, 100V, 0.040 Ohm, N-Channel Power Features MOSFETs • 40A, 100V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.040Ω the MegaFET process. This process, which uses feature • UIS Rating Curve sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulti

See also transistors datasheet: RFP2N20 , RFP2N20L , RFP3055 , RFP3055LE , RFP30N06LE , RFP30P05 , RFP30P06 , RFP40N10 , IRFP260N , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE .

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