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RFP50N05L MOSFET (IC) Datasheet. Cross Reference Search. RFP50N05L Equivalent

Type Designator: RFP50N05L

Type of RFP50N05L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 110

Maximum drain-source voltage |Uds|, V: 50

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 50

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP50N05L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.022

Package: TO220AB

RFP50N05L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP50N05L PDF doc:

1.1. rfp50n05l.pdf Size:161K _fairchild_semi

RFP50N05L
RFP50N05L

1.2. rfg50n05l_rfp50n05l.pdf Size:51K _intersil

RFP50N05L
RFP50N05L

RFG50N05L, RFP50N05L Data Sheet July 1999 File Number 2424.3 50A, 50V, 0.022 Ohm, Logic Level, Features N-Channel Power MOSFETs • 50A, 50V These are logic-level N-channel power MOSFETs • rDS(ON) = 0.022Ω manufactured using the MegaFET process. This process, • UIS SOA Rating Curve (Single Pulse) which uses feature sizes approaching those of LSI integrated circuits gives optimum

3.1. rfg50n06_rfp50n06_rf1s50n06sm.pdf Size:373K _fairchild_semi

RFP50N05L
RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet January 2002 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs • 50A, 60V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.022Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

3.2. rfg50n06le_rfp50n06le_rf1s50n06lesm.pdf Size:154K _intersil

RFP50N05L
RFP50N05L

RFG50N06LE, RFP50N06LE, RF1S50N06LESM Data Sheet October 1999 File Number 4072.3 50A, 60V, 0.022 Ohm, Logic Level Features N-Channel Power MOSFETs • 50A, 60V These N-Channel enhancement mode power MOSFETs are • rDS(ON) = 0.022Ω manufactured using the latest manufacturing process • Temperature Compensating PSPICE® Model technology. This process, which uses feature sizes approa

3.3. rfp50n06.pdf Size:74K _intersil

RFP50N05L
RFP50N05L

RFG50N06, RFP50N06, RF1S50N06SM Data Sheet July 1999 File Number 3575.4 50A, 60V, 0.022 Ohm, N-Channel Power Features MOSFETs 50A, 60V These N-Channel power MOSFETs are manufactured using rDS(ON) = 0.022? the MegaFET process. This process, which uses feature Temperature Compensating PSPICE Model sizes approaching those of LSI integrated circuits gives optimum utilization of silico

See also transistors datasheet: RFP30P06 , RFP40N10 , RFP40N10LE , RFP45N06 , RFP45N06LE , RFP4N05L , RFP4N06L , RFP4N100 , J113 , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , RFP8N20L , RFP8P05 .

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