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RFP70N06 MOSFET (IC) Datasheet. Cross Reference Search. RFP70N06 Equivalent

Type Designator: RFP70N06

Type of RFP70N06 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 70

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP70N06 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.014

Package: TO220AB

RFP70N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RFP70N06 PDF doc:

1.1. rfg70n06_rfp70n06_rf1s70n06_rf1s70n06sm.pdf Size:229K _fairchild_semi

RFP70N06
RFP70N06

RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet February 2005 70A, 60V, 0.014 Ohm, N-Channel Power Features MOSFETs • 70A, 60V These are N-Channel power MOSFETs manufactured using • rDS(on) = 0.014Ω the MegaFET process. This process, which uses feature • Temperature Compensated PSPICE® Model sizes approaching those of LSI circuits, gives optimum utilization of silic

3.1. rfp70n03_rf1s70n03sm.pdf Size:142K _intersil

RFP70N06
RFP70N06

RFP70N03, RF1S70N03SM Data Sheet July 1999 File Number 3404.4 70A, 30V, 0.010 Ohm, N-Channel Power Features MOSFETs • 70A, 30V These N-Channel power MOSFETs are manufactured using • rDS(ON) = 0.010Ω the MegaFET process. This process, which uses feature • Temperature Compensating PSPICE® Model sizes approaching those of LSI integrated circuits gives optimum utilization of sili

See also transistors datasheet: RFP4N05L , RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , TPC8107 , RFP7N10LE , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L .

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