All MOSFET. RFP7N10LE Datasheet

 

RFP7N10LE MOSFET. Datasheet pdf. Equivalent

Type Designator: RFP7N10LE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 47 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 7 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO220AB

RFP7N10LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP7N10LE 说明书

1.1. rfd7n10le-sm_rfp7n10le.pdf Size:136K _harris_semi

RFP7N10LE
RFP7N10LE

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB • 7A, 100V TOP VIEW • rDS(ON) = 0.300Ω SOURCE • 2KV ESD Protected DRAIN DRAIN (FLANGE) • Temperature Compensating PSPICE Model GATE • Can be Driven Directly fr

Datasheet: RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , 40673 , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE .

 


RFP7N10LE
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