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RFP7N10LE MOSFET (IC) Datasheet. Cross Reference Search. RFP7N10LE Equivalent

Type Designator: RFP7N10LE

Type of RFP7N10LE transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 47

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 7

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP7N10LE transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220AB

RFP7N10LE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP7N10LE PDF doc:

1.1. rfd7n10le-sm_rfp7n10le.pdf Size:136K _harris_semi

RFP7N10LE
RFP7N10LE

RFD7N10LE, RFD7N10LESM S E M I C O N D U C T O R RFP7N10LE 7A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs (MegaFETs) February 1994 Features Packaging JEDEC TO-220AB • 7A, 100V TOP VIEW • rDS(ON) = 0.300Ω SOURCE • 2KV ESD Protected DRAIN DRAIN (FLANGE) • Temperature Compensating PSPICE Model GATE • Can be Driven Directly fr

See also transistors datasheet: RFP4N06L , RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , 40673 , RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE .

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