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RFP8N20L MOSFET (IC) Datasheet. Cross Reference Search. RFP8N20L Equivalent

Type Designator: RFP8N20L

Type of RFP8N20L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 60

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 150

Rise Time of RFP8N20L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.6

Package: TO220AB

RFP8N20L Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFP8N20L PDF doc:

1.1. rfp8n20l.pdf Size:38K _intersil

RFP8N20L
RFP8N20L

RFP8N20L Data Sheet July 1999 File Number 1514.3 8A, 200V, 0.600 Ohm, Logic Level, Features N-Channel Power MOSFET • 8A, 200V This N-Channel enhancement mode silicon gate power field • rDS(ON) = 0.600Ω effect transistor is specifically designed for use with logic • Design Optimized for 5V Gate Drives level (5V) driving sources in applications such as programmable controllers,

See also transistors datasheet: RFP4N100 , RFP50N05L , RFP50N06 , RFP50N06LE , RFP60P03 , RFP70N03 , RFP70N06 , RFP7N10LE , IRF9Z34 , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , RFW2N06RLE .

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