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RFW2N06RLE MOSFET (IC) Datasheet. Cross Reference Search. RFW2N06RLE Equivalent

Type Designator: RFW2N06RLE

Type of RFW2N06RLE transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 1.09

Maximum drain-source voltage |Uds|, V: 60

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 2

Maximum junction temperature (Tj), °C: 150

Rise Time of RFW2N06RLE transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.16

Package: HEXDIP

RFW2N06RLE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFW2N06RLE PDF doc:

1.1. rfw2n06rle.pdf Size:48K _intersil

RFW2N06RLE
RFW2N06RLE

RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, Features N-Channel Power MOSFET • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, • rDS(on) = 0.160Ω power MOSFET is manufactured using the MegaFET • UIS Rating Curve (Single Pulse) process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

See also transistors datasheet: RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , 2SK3878 , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D , SDF034JAB-S , SDF034JAB-U .

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