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RFW2N06RLE MOSFET. Datasheet pdf. Equivalent

Type Designator: RFW2N06RLE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.09 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.16 Ohm

Package: HEXDIP

RFW2N06RLE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RFW2N06RLE PDF doc:

1.1. rfw2n06rle.pdf Size:48K _intersil

RFW2N06RLE
RFW2N06RLE

RFW2N06RLE Data Sheet July 1999 File Number 2838.3 2A, 60V, 0.160 Ohm, Logic Level, Features N-Channel Power MOSFET • 2A, 60V The RFW2N06RLE N-Channel, logic level, ESD protected, • rDS(on) = 0.160Ω power MOSFET is manufactured using the MegaFET • UIS Rating Curve (Single Pulse) process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives

Datasheet: RFP8N20L , RFP8P05 , RFP8P06E , RFP8P06LE , RFP8P10 , RFT1P06E , RFT2P03L , RFT3055LE , 2SK3878 , RLP1N06CLE , SD10425JAA , SDF034JAA-D , SDF034JAA-S , SDF034JAA-U , SDF034JAB-D , SDF034JAB-S , SDF034JAB-U .

 


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