SFF9140 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFF9140

Type of SFF9140 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 80

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 13

Maximum junction temperature (Tj), °C: 150

Rise Time of SFF9140 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1180

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO3PF

Equivalent transistors for SFF9140

SFF9140 PDF documents for downloads:

1.1. sff9140.pdf Size:212K _samsung

SFF9140 Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -13.2 A Improved Gate Charge 175oC Operating Temperature TO-3PF Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -13.2 ID A Continuous Drain Current (TC=100oC) -9.2 IDM Drain Current-Pulsed 1 53 A O + VGS Gate-to-Source Voltage _ 20 V 2 EAS Single Pulsed Avalanche Energy 348 mJ O IAR Avalanche Current 1 -13.2 A O EAR Repetitive Avalanche Energy 1 8.0 mJ O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) W 80 PD Linear Derating Factor 0.53 W/oC Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C

See also transistors datasheet: SDF9N100JED-U , SDF9N100SXH , SDF9NA80 , SDFC30JAA , SDFC30JAB , SDFC40 , SDFE22JAA , SDFE22JAB , IRFB3306 , SFF9240 , SFF9244 , SFH154 , SFH9140 , SFH9154 , SFH9240 , SFH9244 , SFI2955 .

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