SFI9644 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFI9644

Type of SFI9644 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 123

Maximum drain-source voltage |Uds|, V: 250V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 8.6

Maximum junction temperature (Tj), °C: 150

Rise Time of SFI9644 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1205

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: I2PAK

Equivalent transistors for SFI9644

SFI9644 PDF documents for downloads:

5.1. sfi9614.pdf Size:216K _samsung

SFW/I9614 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V 2 Low RDS(ON) : 3.5 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage -250 V Continuous Drain Current (TC=25oC) -1.6 ID A Continuous Drain Current (TC=100oC) -1.0 IDM Drain Current-Pulsed 1 -6.5 A O + _ VGS Gate-to-Source Voltage 30 V EAS Single Pulsed Avalanche Energy 2 112 mJ O IAR Avalanche Current 1 -1.6 A O EAR Repetitive Avalanche Energy 2.0 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 -4.8 V/ns O * Total Power Dissipation (TA=25oC) 3.1 W PD Total Power Dissipation (TC=25oC) 20 W Linear Derating Factor 0.16 W/oC Operating Junction and TJ , TSTG - 55 to +150 S

5.2. sfi9634.pdf Size:207K _samsung

SFW/I9634 Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology ? RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.0 A Improved Gate Charge Extended Safe Operating Area D2-PAK I2-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -250V 2 Low RDS(ON) : 0.876 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage -250 V Continuous Drain Current (TC=25oC) -5.0 ID A Continuous Drain Current (TC=100oC) -3.3 IDM Drain Current-Pulsed 1 O -20 A + VGS Gate-to-Source Voltage _ 30 V EAS Single Pulsed Avalanche Energy 2 313 mJ O IAR Avalanche Current 1 -5.0 A O EAR Repetitive Avalanche Energy 1 7.0 mJ O 3 dv/dt Peak Diode Recovery dv/dt -4.8 V/ns O * Total Power Dissipation (TA=25oC) 3.1 W PD Total Power Dissipation (TC=25oC) 70 W Linear Derating Factor 0.56 W/oC Operating Junction and TJ , TSTG - 55 to +150 Stora

See also transistors datasheet: SFI9530 , SFI9610 , SFI9614 , SFI9620 , SFI9624 , SFI9630 , SFI9634 , SFI9640 , BSS138 , SFI9Z14 , SFI9Z24 , SFI9Z34 , SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 .

Keywords