MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ552L
2SJ552S ..2SK1515
2SK1516 ..2SK2139
2SK214 ..2SK2737
2SK2738 ..2SK3131
2SK3132 ..2SK3625
2SK363 ..2SK427
2SK429L ..3N202
3N203 ..4N70K
4N80 ..AO4627
AO4629 ..AOD2606
AOD2610 ..AON3818
AON4420L ..AOP609
AOT10N60 ..AOW15S65
AOW20C60 ..AP15T20AGH-HF
AP15T20GH-HF ..AP3989I
AP3989P ..AP4933GM-HF
AP4936GM ..AP9412BGM-HF
AP9412CGM-HF ..AP9962AGD
AP9962AGH ..APT10086BVFR
APT10086BVR ..APT50M80JLC
APT50M85B2VFR ..AUIRF7103Q
AUIRF7207Q ..BF1101R
BF1101WR ..BLF404
BLF521 ..BSC019N02KSG
BSC019N04NSG ..BSS138K
BSS138L ..BUK662R4-40C
BUK662R5-30C ..BUK9277-55A
BUK9504-40A ..BUZ64
BUZ71 ..CED4060AL
CED40N10 ..CEP08N8
CEP09N7G ..CPH6341
CPH6347 ..DMP2240UW
DMP22D6UT ..FDA28N50F
FDA33N25 ..FDD3672
FDD3672 ..FDMA7632
FDMA7632 ..FDMS9620S
FDN302P ..FDQ7236AS
FDQ7238AS ..FDS9934C
FDS9934C ..FQB44N10
FQB47P06 ..FQPF17N40
FQPF17N40 ..FRM240R
FRM244D ..H02N60I
H02N60J ..HAT1094C
HAT1095C ..HITJ0204MP
HITJ0302MP ..IPA50R399CP
IPA50R520CP ..IPB80N06S2L-07
IPB80N06S2L-09 ..IPI200N25N3G
IPI22N03S4L-15 ..IPP60R750E6
IPP60R950C6 ..IRF1324L
IRF1324S ..IRF6215
IRF6215L ..IRF7343I
IRF7343Q ..IRF8734
IRF8736 ..IRFD9120
IRFD9210 ..IRFM210A
IRFM214A ..IRFR025
IRFR1010Z ..IRFS5615
IRFS5620 ..IRFU3711Z
IRFU3806 ..IRL520
IRL520A ..IRLSL3034
IRLSL3036 ..IXFH110N15T2
IXFH110N25T ..IXFK32N100Q3
IXFK32N50Q ..IXFN73N30
IXFN73N30Q ..IXFV110N25T
IXFV110N25TS ..IXTA1N100P
IXTA1N120P ..IXTH26P20P
IXTH27N35MA ..IXTP10P50P
IXTP110N055P ..IXTQ62N15P
IXTQ64N25P ..J113
J174 ..KMB012N40DA
KMB014P30QA ..KTK598V
KTK697TV ..MTB12N04J3
MTB12P04J3 ..MTN13N50E3
MTN13N50FP ..MTP3J15N3
MTP3J15Y3 ..NDT3055
NDT3055L ..NTMFS5844NL
NTMS10P02 ..PHP2N50E
PHP2N60E ..PSMN018-80YS
PSMN020-100YS ..RD07MVS1
RD07MVS1B ..RJK0353DPA
RJK0353DSP ..RP1L055SN
RP1L080SN ..SDF044JAA-D
SDF044JAA-S ..SFR9034
SFR9110 ..SMG2329P
SMG2330N ..SML5030AN
SML5030BN ..SPD06N60C3
SPD06N80C3 ..SSG4502C
SSG4502CE ..SSM3K15AMFV
SSM3K15CT ..SSP7434N
SSP7436N ..STB7NK80Z-1
STB80N20M5 ..STD7NM80
STD7NM80-1 ..STH7NA60FI
STH7NA80 ..STP15N05L
STP15N05LFI ..STP5N95K3
STP5NA50 ..STU60N55F3
STU65N3LLH5 ..TF252TH
TF256 ..TK80S04K3L
TK80S06K3L ..TPCA8046-H
TPCA8047-H ..UP672
UP9971 ..WTC2305
WTC2305DS ..ZXMP10A16K
ZXMP10A17E6 ..ZXMS6006SG
 
SFP9530 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SFP9530 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFP9530

Type of SFP9530 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 66

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SFP9530 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220

Equivalent transistors for SFP9530

SFP9530 PDF doc:

1.1. sfp9530.pdf Size:232K _fairchild_semi

SFP9530
SFP9530

1.2. sfp9530.pdf Size:498K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -10.5 ID A Continuous Drain Current (TC=100oC) -7.5 1 IDM Drain Current-Pulsed A O -42 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 368 O IAR Avalanche Current 1 -10.5 A O EAR Repetitive Avalanche Energy 1 6.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 66 W PD Linear Derating Factor W/oC 0.44 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp.

5.1. sfp9520.pdf Size:229K _fairchild_semi

SFP9530
SFP9530

5.2. sfp9540.pdf Size:503K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -17 ID A Continuous Drain Current (TC=100oC) -12 1 IDM Drain Current-Pulsed A O -68 _ VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 2 mJ O 578 1 IAR Avalanche Current O -17 A EAR Repetitive Avalanche Energy 1 O 13.2 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 132 W PD Linear Derating Factor W/oC 0.88 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. fo

5.3. sfp9510.pdf Size:497K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -3.6 ID A Continuous Drain Current (TC=100oC) -2.5 IDM Drain Current-Pulsed 1 -14 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 52 O IAR Avalanche Current 1 -3.6 A O EAR Repetitive Avalanche Energy 1 mJ 3.2 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 32 W PD Linear Derating Factor W/oC 0.21 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for S

5.4. sfp9520.pdf Size:495K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -6 ID A Continuous Drain Current (TC=100oC) -4 IDM Drain Current-Pulsed 1 -24 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 144 O IAR Avalanche Current 1 -6 A O EAR Repetitive Avalanche Energy 1 mJ 4.9 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 49 W PD Linear Derating Factor W/oC 0.33 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for Solder

See also transistors datasheet: SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , IRF9640 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 .

Keywords

 SFP9530 Datasheet  SFP9530 Datenblatt  SFP9530 RoHS  SFP9530 Distributor
 SFP9530 Application Notes  SFP9530 Component  SFP9530 Circuit  SFP9530 Schematic
 SFP9530 Equivalent  SFP9530 Cross Reference  SFP9530 Data Sheet  SFP9530 Fiche Technique

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