MOSFET Datasheet



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SFP9530
  SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
  SFP9530
  SFP9530
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553L
2SJ553S ..2SK1516
2SK1517 ..2SK2136
2SK2137 ..2SK2735
2SK2735L ..2SK3125
2SK3126 ..2SK357
2SK3582CT ..2SK4195LS
2SK4196LS ..3N159
3N161 ..40821
40822 ..AO4496
AO4498 ..AOC2423
AOC2800 ..AON2701
AON2705 ..AON7752
AON7754 ..AOU4N60
AOU4S60 ..AP13P15GP-HF
AP13P15GS-HF ..AP30T10GP-HF
AP30T10GS-HF ..AP4800AGM-HF
AP4800BGM-HF ..AP9408AGH
AP9408AGI ..AP9930AGM
AP9930GM-HF ..APT1004RGN
APT1004RKN ..APT50M50L2LL
APT50M50PVR ..AUIRF3710ZS
AUIRF3805 ..AUIRLR3915
AUIRLS3034 ..BLF202
BLF2043F ..BSB028N06NN3G
BSB053N03LPG ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3355
CPH3356 ..DMP210DUDJ
DMP210DUFB4 ..FCP9N60N
FCPF11N60 ..FDC642P_F085
FDC645N ..FDM3622
FDM47-06KC5 ..FDMS7608S
FDMS7620S ..FDP8860
FDP8870 ..FDS8926A
FDS8928A ..FQB1P50
FQB22P10 ..FQPF3N25
FQPF3N80C ..FRS240R
FRS244D ..H5N2008P
H5N2301PF ..HAT2080R
HAT2080T ..HUF75332S3S
HUF75333G3 ..IPB022N04LG
IPB023N04NG ..IPD14N06S2-80
IPD15N06S2L-64 ..IPI80N04S3-06
IPI80N04S3-H4 ..IPP90R1K0C3
IPP90R1K2C3 ..IRF2807
IRF2807L ..IRF644
IRF644A ..IRF7450
IRF7451 ..IRF9533
IRF9540 ..IRFH3702
IRFH3707 ..IRFP140
IRFP1405 ..IRFR3411
IRFR3504Z ..IRFS750A
IRFS820 ..IRFW520A
IRFW530A ..IRL8113
IRL8113L ..IRLU3717
IRLU3802 ..IXFH16N120P
IXFH16N50P ..IXFK64N50Q3
IXFK64N60P ..IXFP8N50PM
IXFQ10N80P ..IXFV74N20PS
IXFV96N15P ..IXTA32P20T
IXTA36N30P ..IXTH41N25
IXTH420N04T2 ..IXTP1R4N120P
IXTP1R4N60P ..IXTT16N10D2
IXTT16N20D2 ..K4059
K596 ..KMB7D0DN40QB
KMB7D0N40QA ..LKK47-06C5
LS3954 ..MTB40P04J3
MTB40P06J3 ..MTN2572F3
MTN2572FP ..MTP6N60
MTP7425Q8 ..NTD20N06L
NTD20P06L ..NTR4503N
NTS2101P ..PHT6N06T
PHT6NQ10T ..PSMN1R5-25YL
PSMN1R5-30YL ..RF1S60P03SM
RF1S630SM ..RJK03E7DPA
RJK03E8DPA ..RQK0201QGDQA
RQK0202RGDQA ..SDF100NA40HI
SDF100NA40JD ..SFR9014
SFR9024 ..SMG2310N
SMG2314N ..SML40M42BFN
SML40M80AFN ..SPA11N60CFD
SPA11N65C3 ..SSE70N10-44P
SSE90N04-03P ..SSM3J305T
SSM3J306T ..SSM6P15FE
SSM6P15FU ..STB200N6F3
STB200NF03 ..STD3N30-1
STD3N30L ..STF2HNK60Z
STF2N62K3 ..STK9N10
STL100N1VH5 ..STP14NM50N
STP14NM65N ..STP5N50FI
STP5N52K3 ..STS4DPF30L
STS4NF100 ..STU622S
STU624S ..TF256TH
TF408 ..TK80X04K3
TK8A10K3 ..TPCA8048-H
TPCA8049-H ..UP9T15G
URFP150 ..WTC2306
WTC2312 ..ZXMP10A17G
ZXMP10A17K ..ZXMS6006SG
 
SFP9530 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SFP9530 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFP9530

Type of SFP9530 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 66

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SFP9530 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220

Equivalent transistors for SFP9530 - Cross-Reference Search

SFP9530 PDF doc:

1.1. sfp9530.pdf Size:232K _fairchild_semi

SFP9530
SFP9530

1.2. sfp9530.pdf Size:498K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -10.5 ID A Continuous Drain Current (TC=100oC) -7.5 1 IDM Drain Current-Pulsed A O -42 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 368 O IAR Avalanche Current 1 -10.5 A O EAR Repetitive Avalanche Energy 1 6.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 66 W PD Linear Derating Factor W/oC 0.44 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp.

5.1. sfp9520.pdf Size:229K _fairchild_semi

SFP9530
SFP9530

5.2. sfp9540.pdf Size:503K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -17 ID A Continuous Drain Current (TC=100oC) -12 1 IDM Drain Current-Pulsed A O -68 _ VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 2 mJ O 578 1 IAR Avalanche Current O -17 A EAR Repetitive Avalanche Energy 1 O 13.2 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 132 W PD Linear Derating Factor W/oC 0.88 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. fo

5.3. sfp9510.pdf Size:497K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -3.6 ID A Continuous Drain Current (TC=100oC) -2.5 IDM Drain Current-Pulsed 1 -14 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 52 O IAR Avalanche Current 1 -3.6 A O EAR Repetitive Avalanche Energy 1 mJ 3.2 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 32 W PD Linear Derating Factor W/oC 0.21 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for S

5.4. sfp9520.pdf Size:495K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -6 ID A Continuous Drain Current (TC=100oC) -4 IDM Drain Current-Pulsed 1 -24 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 144 O IAR Avalanche Current 1 -6 A O EAR Repetitive Avalanche Energy 1 mJ 4.9 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 49 W PD Linear Derating Factor W/oC 0.33 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for Solder

See also transistors datasheet: SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , IRF9640 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 .

Keywords

 SFP9530 Datasheet  SFP9530 Datenblatt  SFP9530 RoHS  SFP9530 Distributor
 SFP9530 Application Notes  SFP9530 Component  SFP9530 Circuit  SFP9530 Schematic
 SFP9530 Equivalent  SFP9530 Cross Reference  SFP9530 Data Sheet  SFP9530 Fiche Technique

 

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