MOSFET Datasheet


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SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AON6240
AON6242 ..AP0203GMT-HF
AP02N40H-HF ..AP2306AGEN-HF
AP2306AGN-HF ..AP4409GEM
AP4409GEP-HF ..AP6680BGM-HF
AP6680BGYT-HF ..AP9487GM-HF
AP94T07GH-HF ..AP9974GJ-HF
AP9974GP-HF ..APT5040CNR
APT50M50JVFR ..AUIRFP4368
AUIRFP4410Z ..BF545B
BF545C ..BLF6G27LS-100
BLF6G27LS-135 ..BSC110N06NS3G
BSC118N10NSG ..BSZ110N06NS3G
BSZ120P03NS3EG ..BUK75150-55A
BUK7516-55A ..BUK9614-55
BUK9614-55A ..CEA3252
CEA6200 ..CEF630N
CEF6601 ..CEP840G
CEP840L ..DMG8601UFG
DMG8822UTS ..EFC4612R
EFC4615R ..FDB5680
FDB5690 ..FDD8424H
FDD8424H_F085 ..FDMC86102LZ
FDMC86106LZ ..FDP15N40
FDP15N40 ..FDS6294
FDS6294 ..FK14KM-9
FK14SM-10 ..FQD4P25
FQD5N20L ..FQS4903
FQT13N06 ..FRX130D4
FRX130H1 ..H5N2507P
H5N2508DL ..HAT2096H
HAT2099H ..HUF75339P3
HUF75339S3 ..IPB039N10N3G
IPB041N04NG ..IPD30N03S2L-10
IPD30N03S2L-20 ..IPI90N06S4-04
IPI90N06S4L-04 ..IPS50R520CP
IPU039N03LG ..IRF3205ZS
IRF330 ..IRF6622
IRF6623 ..IRF7501
IRF7503 ..IRF9640
IRF9640S ..IRFH5302
IRFH5302D ..IRFP233
IRFP240 ..IRFR420A
IRFR4615 ..IRFS9143
IRFS9230 ..IRFY044C
IRFY120 ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF3N50DS
KF3N50DZ ..KP103K
KP103L ..MCH6331
MCH6336 ..MTB90P06J3
MTB90P06Q8 ..MTN3418N3
MTN3418S3 ..NDB5060
NDB5060L ..NTD4860N
NTD4863N ..NTZD3154N
NTZD3155C ..PMBF4391
PMBF4392 ..PSMN3R0-60ES
PSMN3R0-60PS ..RFD15P06SM
RFD16N03L ..RJK0658DPA
RJK0659DPA ..RRH100P03
RRH140P03 ..SDF230JDA
SDF240 ..SGM0410S
SGM2305A ..SMK1060FJ
SMK1060P ..SML60B21
SML60B25 ..SPP15P10PG
SPP15P10PLH ..SSH40N15A
SSH40N20 ..SSM6J214FE
SSM6J215FE ..SST308
SST309 ..STD16NF06L
STD16NF25 ..STF10NM65N
STF11N52K3 ..STK22N06
STK23N05L ..STP22NF03L
STP22NM60N ..STP7NA40
STP7NA40FI ..STW14NK50Z
STW15N50 ..TK13J65U
TK13P25D ..TPC8026
TPC8027 ..TPCC8074
TPCC8076 ..UT4435
UT4446 ..ZVN4306AV
ZVN4306G ..ZXMS6006SG
 
SFP9530 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SFP9530 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFP9530

Type of SFP9530 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 66

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SFP9530 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220

Equivalent transistors for SFP9530

SFP9530 PDF doc:

1.1. sfp9530.pdf Size:232K _fairchild_semi

SFP9530
SFP9530

1.2. sfp9530.pdf Size:498K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -10.5 ID A Continuous Drain Current (TC=100oC) -7.5 1 IDM Drain Current-Pulsed A O -42 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 368 O IAR Avalanche Current 1 -10.5 A O EAR Repetitive Avalanche Energy 1 6.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 66 W PD Linear Derating Factor W/oC 0.44 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp.

5.1. sfp9520.pdf Size:229K _fairchild_semi

SFP9530
SFP9530

5.2. sfp9540.pdf Size:503K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -17 ID A Continuous Drain Current (TC=100oC) -12 1 IDM Drain Current-Pulsed A O -68 _ VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 2 mJ O 578 1 IAR Avalanche Current O -17 A EAR Repetitive Avalanche Energy 1 O 13.2 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 132 W PD Linear Derating Factor W/oC 0.88 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. fo

5.3. sfp9510.pdf Size:497K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -3.6 ID A Continuous Drain Current (TC=100oC) -2.5 IDM Drain Current-Pulsed 1 -14 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 52 O IAR Avalanche Current 1 -3.6 A O EAR Repetitive Avalanche Energy 1 mJ 3.2 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 32 W PD Linear Derating Factor W/oC 0.21 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for S

5.4. sfp9520.pdf Size:495K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -6 ID A Continuous Drain Current (TC=100oC) -4 IDM Drain Current-Pulsed 1 -24 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 144 O IAR Avalanche Current 1 -6 A O EAR Repetitive Avalanche Energy 1 mJ 4.9 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 49 W PD Linear Derating Factor W/oC 0.33 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for Solder

See also transistors datasheet: SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , IRF9640 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 .

Keywords

 SFP9530 Datasheet  SFP9530 Datenblatt  SFP9530 RoHS  SFP9530 Distributor
 SFP9530 Application Notes  SFP9530 Component  SFP9530 Circuit  SFP9530 Schematic
 SFP9530 Equivalent  SFP9530 Cross Reference  SFP9530 Data Sheet  SFP9530 Fiche Technique

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