MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
  SFP9530
 
SFP9530
  SFP9530
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB2532_F085
FDB2552 ..FDD8870
FDD8870_F085 ..FDMS86105
FDMS86200 ..FDS4501H
FDS4559 ..FK7SM-12
FK7UM-12 ..FQP11N40C
FQP11N40C ..FRE264D
FRE264H ..FSL23A4D
FSL23A4R ..H7N0311LD
H7N0311LM ..HAT2179R
HAT2183WP ..HUF76129D3S
HUF76129P3 ..IPB120N06S4-02
IPB120N06S4-03 ..IPD60R520CP
IPD60R600C6 ..IPP072N10N3G
IPP075N15N3G ..IRC130
IRC140 ..IRF3711ZCS
IRF3711ZL ..IRF6723M2D
IRF6724M ..IRF7752G
IRF7754G ..IRFB3206G
IRFB3207 ..IRFI4321
IRFI4410Z ..IRFP350LC
IRFP351 ..IRFS153
IRFS230 ..IRFSL3607
IRFSL3806 ..IRFZ34NL
IRFZ34NS ..IRLL3303
IRLM014A ..IXBH20N140
IXBH20N160 ..IXFH58N20
IXFH58N20Q ..IXFN100N50Q3
IXFN102N30P ..IXFR64N50P
IXFR64N50Q3 ..IXFX520N075T2
IXFX52N60Q2 ..IXTC280N055T
IXTC36P15P ..IXTK140N30P
IXTK150N15P ..IXTP60N20T
IXTP60N28TM-A ..IXTV22N60P
IXTV22N60PS ..KF70N06F
KF70N06P ..KP731B
KP731V ..MMBF4391
MMBF4391L ..MTD6N20E
MTDA0N10J3 ..MTN5N60J3
MTN5N65FP ..NDD05N50Z
NDF02N60Z ..NTGS3130N
NTGS3136P ..P1087
PF5102 ..PMN23UN
PMN25EN ..PSMN7R0-40LS
PSMN7R0-60YS ..RFP12N10L
RFP12P08 ..RJK2017DPE
RJK2017DPP ..RSR025N03
RSR025N05 ..SDF360JEC
SDF360JED ..SGM2310A
SGM3055 ..SMK0860P
SMK0870F ..SML6060AN
SML6060BN ..SPD50N03S2L-06G
SPD50P03LG ..SSG4841P
SSG4842N ..SSM3K309T
SSM3K310T ..SSPS7331P
SSPS7332N ..STB80NF03L-04
STB80NF03L-04T4 ..STD70NS04ZL
STD75N3LLH6 ..STH15NA50FI
STH180N10F3-2 ..STM4639
STM4639T ..STP25N06FI
STP25NM60ND ..STP7NA40
STP7NA40FI ..STT6405
STT6602 ..STW15NM60ND
STW160N75F3 ..TK16A45D
TK16A55D ..TPC8046-H
TPC8047-H ..TPCF8105
TPCF8107 ..UT70P03
UT7317 ..ZVP0540A
ZVP0545A ..ZXMS6006SG
 
SFP9530 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SFP9530 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFP9530

Type of SFP9530 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 66

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SFP9530 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: TO220

Equivalent transistors for SFP9530

SFP9530 PDF doc:

1.1. sfp9530.pdf Size:232K _fairchild_semi

SFP9530
SFP9530

1.2. sfp9530.pdf Size:498K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.5 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.225 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -10.5 ID A Continuous Drain Current (TC=100oC) -7.5 1 IDM Drain Current-Pulsed A O -42 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 368 O IAR Avalanche Current 1 -10.5 A O EAR Repetitive Avalanche Energy 1 6.6 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 66 W PD Linear Derating Factor W/oC 0.44 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp.

5.1. sfp9520.pdf Size:229K _fairchild_semi

SFP9530
SFP9530

5.2. sfp9540.pdf Size:503K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -17 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -17 ID A Continuous Drain Current (TC=100oC) -12 1 IDM Drain Current-Pulsed A O -68 _ VGS Gate-to-Source Voltage 20 V EAS Single Pulsed Avalanche Energy 2 mJ O 578 1 IAR Avalanche Current O -17 A EAR Repetitive Avalanche Energy 1 O 13.2 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 132 W PD Linear Derating Factor W/oC 0.88 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. fo

5.3. sfp9510.pdf Size:497K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.912 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -3.6 ID A Continuous Drain Current (TC=100oC) -2.5 IDM Drain Current-Pulsed 1 -14 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 52 O IAR Avalanche Current 1 -3.6 A O EAR Repetitive Avalanche Energy 1 mJ 3.2 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 32 W PD Linear Derating Factor W/oC 0.21 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for S

5.4. sfp9520.pdf Size:495K _samsung

SFP9530
SFP9530
Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6 A Improved Gate Charge 175oC Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 A (Max.) @ VDS = -100V Low RDS(ON) : 0.444 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -6 ID A Continuous Drain Current (TC=100oC) -4 IDM Drain Current-Pulsed 1 -24 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 144 O IAR Avalanche Current 1 -6 A O EAR Repetitive Avalanche Energy 1 mJ 4.9 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 49 W PD Linear Derating Factor W/oC 0.33 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for Solder

See also transistors datasheet: SFM9014 , SFM9110 , SFM9120 , SFM9210 , SFM9214 , SFP2955 , SFP9510 , SFP9520 , IRF9640 , SFP9540 , SFP9610 , SFP9614 , SFP9620 , SFP9624 , SFP9630 , SFP9634 , SFP9640 .

Keywords

 SFP9530 Datasheet  SFP9530 Datenblatt  SFP9530 RoHS  SFP9530 Distributor
 SFP9530 Application Notes  SFP9530 Component  SFP9530 Circuit  SFP9530 Schematic
 SFP9530 Equivalent  SFP9530 Cross Reference  SFP9530 Data Sheet  SFP9530 Fiche Technique

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