SFR9014 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFR9014

Type of SFR9014 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 24

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.3

Maximum junction temperature (Tj), °C: 150

Rise Time of SFR9014 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 270

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: DPAK

Equivalent transistors for SFR9014

SFR9014 PDF documents for downloads:

1.1. sfr9014.pdf Size:495K _samsung

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Lower RDS(ON) : 0.362 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -5.3 ID A Continuous Drain Current (TC=100oC) -3.7 1 IDM Drain Current-Pulsed 21 A O 2 _ VGS Gate-to-Source Voltage V O EAS Single Pulsed Avalanche Energy 72 mJ 1 IAR Avalanche Current -5.3 A O EAR Repetitive Avalanche Energy 1 O 2.4 mJ dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 24 W Linear Derating Factor 0.19 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

5.1. sfu9024_sfr9024.pdf Size:230K _fairchild_semi

5.2. sfr9034.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -14 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Lower RDS(ON) : 0.106 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -14 ID A Continuous Drain Current (TC=100oC) -9.8 1 IDM Drain Current-Pulsed 56 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 336 mJ O IAR Avalanche Current 1 -14 A O EAR Repetitive Avalanche Energy 1 4.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt -5.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 49 W Linear Derating Factor 0.39 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

5.3. sfr9024.pdf Size:214K _samsung

SFR/U9024 Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.28 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -7.8 A Improved Gate Charge Extended Safe Operating Area D-PAK I-PAK Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Lower RDS(ON) : 0.206 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage -60 V Continuous Drain Current (TC=25oC) -7.8 ID A Continuous Drain Current (TC=100oC) -5.5 IDM Drain Current-Pulsed 1 31 A O + VGS Gate-to-Source Voltage _ 0 V EAS Single Pulsed Avalanche Energy 2 104 mJ O IAR Avalanche Current 1 -7.8 A O EAR Repetitive Avalanche Energy 3.2 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 -5.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 32 W Linear Derating Factor 0.26 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Tempe

See also transistors datasheet: SFP9630 , SFP9634 , SFP9640 , SFP9644 , SFP9Z14 , SFP9Z24 , SFP9Z34 , SFR2955 , IRFZ44V , SFR9024 , SFR9034 , SFR9110 , SFR9120 , SFR9130 , SFR9210 , SFR9214 , SFR9220 .

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