SFR9120 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFR9120

Type of SFR9120 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 32

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.9

Maximum junction temperature (Tj), °C: 150

Rise Time of SFR9120 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 425

Maximum drain-source on-state resistance (Rds), Ohm: 0.6

Package: DPAK

Equivalent transistors for SFR9120

SFR9120 PDF documents for downloads:

1.1. sfr9120_sfu9120.pdf Size:228K _fairchild_semi

1.2. sfr9120.pdf Size:496K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.9 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.444 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -4.9 ID A Continuous Drain Current (TC=100oC) -3.4 1 IDM Drain Current-Pulsed -20 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 96 mJ O IAR Avalanche Current 1 -4.9 A O EAR Repetitive Avalanche Energy 1 3.2 mJ O 3 dv/dt Peak Diode Recovery dv/dt -6.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 32 W Linear Derating Factor 0.26 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o

5.1. sfr9130.pdf Size:498K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -9.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.225 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -9.8 ID A Continuous Drain Current (TC=100oC) -6.9 1 IDM Drain Current-Pulsed 39 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 320 mJ O IAR Avalanche Current 1 -9.8 A O EAR Repetitive Avalanche Energy 1 5.7 mJ O 3 dv/dt Peak Diode Recovery dv/dt -6.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 57 W Linear Derating Factor 0.46 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range

5.2. sfr9110.pdf Size:427K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Lower RDS(ON) : 0.912 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -2.8 ID A Continuous Drain Current (TC=100oC) -2.0 1 IDM Drain Current-Pulsed 11 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 31 mJ O IAR Avalanche Current 1 -2.8 A O EAR Repetitive Avalanche Energy 1 2.0 mJ O 3 dv/dt Peak Diode Recovery dv/dt -6.5 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 20 W Linear Derating Factor 0.16 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C M

See also transistors datasheet: SFP9Z14 , SFP9Z24 , SFP9Z34 , SFR2955 , SFR9014 , SFR9024 , SFR9034 , SFR9110 , 3SK73 , SFR9130 , SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , SFS9520 .

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