SFR9220 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFR9220

Type of SFR9220 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 30

Maximum drain-source voltage |Uds|, V: 200V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 3.1

Maximum junction temperature (Tj), °C: 150

Rise Time of SFR9220 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 415

Maximum drain-source on-state resistance (Rds), Ohm: 1.5

Package: DPAK

Equivalent transistors for SFR9220

SFR9220 PDF documents for downloads:

1.1. sfr9220_sfu9220.pdf Size:257K _fairchild_semi

1.2. sfr9220.pdf Size:498K _samsung

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.1 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -200V Lower RDS(ON) : 1.111 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -200 Continuous Drain Current (TC=25oC) -3.1 ID A Continuous Drain Current (TC=100oC) -1.96 1 IDM Drain Current-Pulsed -12 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 O 256 mJ 1 IAR Avalanche Current -3.1 A O EAR Repetitive Avalanche Energy 1 O 3.0 mJ dv/dt Peak Diode Recovery dv/dt 3 -5.0 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 30 W Linear Derating Factor 0.24 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

4.1. sfr9224.pdf Size:507K _samsung

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -250V Lower RDS(ON) : 1.65 ? (Typ.) 2 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -250 Continuous Drain Current (TC=25oC) -2.5 ID A Continuous Drain Current (TC=100oC) -1.5 IDM Drain Current-Pulsed -10 A 1 O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 156 mJ O IAR Avalanche Current -2.5 A 1 O EAR Repetitive Avalanche Energy 1 3.0 mJ O 3 dv/dt Peak Diode Recovery dv/dt -4.8 V/ns O * Total Power Dissipation (TA=25oC) 2.5 W PD Total Power Dissipation (TC=25oC) 30 W Linear Derating Factor 0.24 W/oC Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C

See also transistors datasheet: SFR9014 , SFR9024 , SFR9034 , SFR9110 , SFR9120 , SFR9130 , SFR9210 , SFR9214 , IRF511 , SFR9224 , SFS2955 , SFS9510 , SFS9520 , SFS9530 , SFS9540 , SFS9610 , SFS9614 .

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