SFS9540 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFS9540

Type of SFS9540 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 53

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 10.7

Maximum junction temperature (Tj), °C: 150

Rise Time of SFS9540 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1180

Maximum drain-source on-state resistance (Rds), Ohm: 0.2

Package: TO220F

Equivalent transistors for SFS9540

SFS9540 PDF documents for downloads:

1.1. sfs9540.pdf Size:501K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology ? RDS(on) = 0.2 Rugged Gate Oxide Technology Lower Input Capacitance ID = -10.7 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Low RDS(ON) : 0.161 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -10.7 ID A Continuous Drain Current (TC=100oC) -8.1 IDM Drain Current-Pulsed 1 -43 A O VGS Gate-to-Source Voltage _ 20 V EAS Single Pulsed Avalanche Energy 2 mJ O 229 IAR Avalanche Current 1 -10.7 A O EAR Repetitive Avalanche Energy 1 5.3 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 53 W PD Linear Derating Factor W/oC 0.35 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp.

5.1. sfs9530.pdf Size:503K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -8 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Low RDS(ON) : 0.225 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -8.0 ID A Continuous Drain Current (TC=100oC) -5.6 1 IDM Drain Current-Pulsed A O -32 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 213 O IAR Avalanche Current 1 -8.0 A O EAR Repetitive Avalanche Energy 1 3.9 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns -6.5 O Total Power Dissipation (TC=25oC) 39 W PD Linear Derating Factor W/oC 0.26 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for So

5.2. sfs9510.pdf Size:502K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 1.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.5 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Low RDS(ON) : 0.912 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -2.5 ID A Continuous Drain Current (TC=100oC) -1.8 IDM Drain Current-Pulsed 1 -10 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 25 O IAR Avalanche Current 1 -2.5 A O EAR Repetitive Avalanche Energy 1 mJ 1.6 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 16 W PD Linear Derating Factor W/oC 0.11 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for So

5.3. sfs9520.pdf Size:493K _samsung

Advanced Power MOSFET FEATURES BVDSS = -100 V Avalanche Rugged Technology RDS(on) = 0.6 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -4.6 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -100V Low RDS(ON) : 0.444 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -100 Continuous Drain Current (TC=25oC) -4.6 ID A Continuous Drain Current (TC=100oC) -3.2 IDM Drain Current-Pulsed 1 -18 A O VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 85 O IAR Avalanche Current 1 -4.6 A O EAR Repetitive Avalanche Energy 1 mJ 2.9 O dv/dt Peak Diode Recovery dv/dt 3 -6.5 V/ns O Total Power Dissipation (TC=25oC) 29 W PD Linear Derating Factor W/oC 0.19 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for

See also transistors datasheet: SFR9210 , SFR9214 , SFR9220 , SFR9224 , SFS2955 , SFS9510 , SFS9520 , SFS9530 , 2SK170 , SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 , SFS9634 , SFS9640 , SFS9644 .

Keywords