SFS9Z14 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SFS9Z14

Type of SFS9Z14 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 24

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.3

Maximum junction temperature (Tj), °C: 150

Rise Time of SFS9Z14 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 270

Maximum drain-source on-state resistance (Rds), Ohm: 0.5

Package: TO220F

Equivalent transistors for SFS9Z14

SFS9Z14 PDF documents for downloads:

5.1. sfs9z34.pdf Size:504K _samsung

Advanced Power MOSFET FEATURES BVDSS = -60 V Avalanche Rugged Technology RDS(on) = 0.14 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -12 A Improved Gate Charge 175oC Operating Temperature Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.) @ VDS = -60V Low RDS(ON) : 0.106 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V -60 Continuous Drain Current (TC=25oC) -12 ID A Continuous Drain Current (TC=100oC) -8.4 1 IDM Drain Current-Pulsed O -48 A VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ O 247 1 IAR Avalanche Current O -12 A EAR Repetitive Avalanche Energy 1 O 3.6 mJ 3 dv/dt Peak Diode Recovery dv/dt V/ns -5.5 O Total Power Dissipation (TC=25oC) 36 W PD Linear Derating Factor W/oC 0.24 Operating Junction and TJ , TSTG - 55 to +175 Storage Temperature Range o C Maximum Lead Temp. for Solderi

See also transistors datasheet: SFS9610 , SFS9614 , SFS9620 , SFS9624 , SFS9630 , SFS9634 , SFS9640 , SFS9644 , IRF740 , SFS9Z24 , SFS9Z34 , SFU2955 , SFU9014 , SFU9024 , SFU9034 , SFU9110 , SFU9120 .

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