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SFW9630 MOSFET (IC) Datasheet. Cross Reference Search. SFW9630 Equivalent

Type Designator: SFW9630

Type of SFW9630 transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 70

Maximum drain-source voltage |Uds|, V: 200

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SFW9630 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 740

Maximum drain-source on-state resistance (Rds), Ohm: 0.8

Package: TO263

SFW9630 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SFW9630 PDF doc:

1.1. sfw9630.pdf Size:501K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.8 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -6.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 0.581 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

4.1. sfw9634.pdf Size:502K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology ? RDS(on) = 1.3 Rugged Gate Oxide Technology Lower Input Capacitance ID = -5.0 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 0.876 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.1. sfw9620.pdf Size:504K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 1.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -3.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 1.111 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

5.2. sfw9640.pdf Size:506K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology RDS(on) = 0.5 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -11 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 0.344 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.3. sfw9624.pdf Size:502K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 2.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -2.7 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 1.65 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteris

5.4. sfw9614.pdf Size:506K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -250 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -250V 2 Low RDS(ON) : 3.5 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characterist

5.5. sfw9610.pdf Size:497K _samsung

SFW9630
SFW9630

Advanced Power MOSFET FEATURES BVDSS = -200 V Avalanche Rugged Technology ? RDS(on) = 3.0 Rugged Gate Oxide Technology Lower Input Capacitance ID = -1.75 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 A (Max.) @ VDS = -200V 2 Low RDS(ON) : 2.084 ? (Typ.) 1 1 2 3 3 1. Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteri

See also transistors datasheet: SFW9510 , SFW9520 , SFW9530 , SFW9540 , SFW9610 , SFW9614 , SFW9620 , SFW9624 , IRFP064N , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443D , SI3812DV .

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