SI3443D MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SI3443D

Type of SI3443D transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 2.0

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V: 4.5

Maximum drain current |Id|, A: 4.4

Maximum junction temperature (Tj), °C: 150

Rise Time of SI3443D transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.065

Package: Vtsop6

Equivalent transistors for SI3443D

SI3443D PDF documents for downloads:

1.1. si3443dv.pdf Size:111K _fairchild_semi

1.2. si3443dv.pdf Size:93K _international_rectifier

PD- 93795A Si3443DV HEXFET® Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET VDSS = -20V Surface Mount 2 5 D D Available in Tape & Reel -2.5V Rated 3 4 G S RDS(on) = 0.065? Top View Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The TSOP-6 package with its customized leadframe produces a HEXFET® power MOSFET with RDS(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and RDS(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. TSOP-6 Absolute Maximum Ratings Parameter Max. Units VDS Drain- Source Voltage -20 V ID @ TA = 25°C Continuous Drain Current, VG

1.3. si3443dv.pdf Size:68K _vishay

Si3443DV Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY FEATURES VDS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 100% Rg Tested 0.065 @ VGS = -4.5 V -4.5 0.090 @ VGS = -2.7 V -3.8 -20 0.100 @ VGS = -2.5 V -3.7 TSOP-6 (4) S Top View 1 6 (3) G 3 mm 5 2 3 4 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3443DV-T1—E3 (Lead Free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Unit Drain-Source Voltage VDS -20 V V Gate-Source Voltage VGS "12 TA = 25_C -3.4 -4.5 Continuous Drain Current (TJ = 150_C)a ID Continuous Drain Current (TJ = 150_C)a ID TA = 70_C -3.6 -2.7 A A Pulsed Drain Current IDM -20 continuous Source Current (Diode Conduction)a IS -1.7 -0.9 TA = 25_C 2.0 1.1 Maximum Power Dissipationa PD W Maximum Power Dissipationa PD W TA = 70_C 1.3 0.7 Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter

See also transistors datasheet: SFW9624 , SFW9630 , SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , SFW9Z34 , BF961 , Si3812DV , Si3851DV , Si3853DV , SI4410DY , SI4435DY , Si4810DY , Si4812DY , Si4816DY .

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