Si3851DV MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: Si3851DV

Type of Si3851DV transistor: FET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W: 1.15

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 1.8

Maximum junction temperature (Tj), °C: 150

Rise Time of Si3851DV transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.36

Package: TSOP6

Equivalent transistors for Si3851DV

Si3851DV PDF documents for downloads:

1.1. si3851dv.pdf Size:116K _vishay

Si3851DV Vishay Siliconix P-Channel 30-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A) Definition 0.200 at VGS = - 10 V ± 1.8 • LITTLE FOOT® Plus - 30 0.360 at VGS = - 4.5 V • Compliant to RoHS Directive 2002/95/EC ± 1.2 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A) Diode Forward Voltage 30 0.5 V at 0.5 A 0.5 TSOP-6 S K Top View A K 1 6 3 mm S N/C 5 2 G G D 3 4 2.85 mm D A Ordering Information: Si3851DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3851DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit VDS Drain-Source Voltage (MOSFET and Schottky) - 30 VKA Reverse Voltage (Schottky) 30 V VGS Gate-Source Voltage (MOSFET) ± 20 ± 20 TA = 25 °C ± 1.8 ± 1.6 ID Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 70 °C ± 1.5 ± 1.2 IDM Pulsed Drain Current (MOSFET) ±

5.1. si3853dv.pdf Size:213K _vishay

Si3853DV Vishay Siliconix P-Channel 20-V (D-S) MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A) Definition 0.200 at VGS = - 4.5 V ± 1.8 • LITTLE FOOT® Plus - 20 0.340 at VGS = - 2.5 V • Compliant to RoHS Directive 2002/95/EC ± 1.3 SCHOTTKY PRODUCT SUMMARY VF (V) VKA (V) IF (A) Diode Forward Voltage 20 0.48 V at 0.5 A 0.5 TSOP-6 S K Top View A K 1 6 3 mm S N/C 5 2 G G D 3 4 2.85 mm D A Ordering Information: Si3853DV-T1-E3 (Lead (Pb)-free) P-Channel MOSFET Si3853DV-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit VDS Drain-Source Voltage (MOSFET and Schottky) - 20 VKA Reverse Voltage (Schottky) 20 V VGS Gate-Source Voltage (MOSFET) ± 12 ± 12 TA = 25 °C ± 1.8 ± 1.6 ID Continuous Drain Current (TJ = 150 °C) (MOSFET)a TA = 70 °C ± 1.5 ± 1.2 IDM Pulsed Drain Current (MOSFET)

5.2. si3850dv.pdf Size:109K _vishay

Si3850DV Vishay Siliconix Complementary MOSFET Half-Bridge (N- and P-Channel) FEATURES PRODUCT SUMMARY D 100% Rg Tested VDS (V) rDS(on) (W) ID (A) 0.500 @ VGS = 4.5 V 1.2 N-Channel 20 N-Channel 20 0.750 @ VGS = 3.0 V 1.0 1.00 @ VGS = -4.5 V -0.85 P Channel 20 P-Channel -20 1.30 @ VGS = -3.0 V -0.75 S2 TSOP-6 Top View G2 G1 1 6 S1 D D 5 D 2 G2 3 4 S2 G1 Ordering Information: Si3850DV-T1 S1 Si3850DV-T1—E3 (Lead (Pb)-Free) ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V V Gate-Source Voltage VGS "12 TA = 25_C 1.2 -0.85 Continuous Drain Current (TJ = 150_C) ID Continuous Drain Current (TJ = 150_C) ID TA = 70_C 0.95 -0.65 A A Pulsed Drain Current IDM 3.5 -2.5 Continuous Source Current (Diode Conduction) IS 1 -1 TA = 25_C 1.25 Maximum Power Dissipation Maximum Power Dissipation PD W PD W (Surface Mounted on FR4 Board) TA = 70_C 0.8 Operating Junction and St

See also transistors datasheet: SFW9634 , SFW9640 , SFW9644 , SFW9Z14 , SFW9Z24 , SFW9Z34 , SI3443D , Si3812DV , BF900 , Si3853DV , SI4410DY , SI4435DY , Si4810DY , Si4812DY , Si4816DY , Si4818DY , Si4831DY .

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