SML1001R3BN MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SML1001R3BN

Type of SML1001R3BN transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 310

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 1

Maximum junction temperature (Tj), °C: 150

Rise Time of SML1001R3BN transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2950

Maximum drain-source on-state resistance (Rds), Ohm: 1.3

Package: TO247

Equivalent transistors for SML1001R3BN

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See also transistors datasheet: Si6820DQ , Si6821DQ , Si6923DQ , SML1001H9 , SML1001R1AN , SML1001R1BN , SML1001R1HN , SML1001R3AN , IRF460 , SML1001R3HN , SML1001RAN , SML1001RBN , SML1001RHN , SML10026DFN , SML1002R4AN , SML1002R4BN , SML1002R4CN .

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