SML1002RCN MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SML1002RCN

Type of SML1002RCN transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 1000V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.5

Maximum junction temperature (Tj), °C: 150

Rise Time of SML1002RCN transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1800

Maximum drain-source on-state resistance (Rds), Ohm: 2

Package: TO254

Equivalent transistors for SML1002RCN

SML1002RCN PDF documents for downloads:

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See also transistors datasheet: SML1001RBN , SML1001RHN , SML10026DFN , SML1002R4AN , SML1002R4BN , SML1002R4CN , SML1002RAN , SML1002RBN , IRF250 , SML1004R2AN , SML1004R2BN , SML1004R2CN , SML1004R2GN , SML1004R2KN , SML1004RAN , SML1004RBN , SML1004RCN .

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