SML1004R2KN
MOSFET transistor datasheet. Parameters and characteristics. Type Designator: SML1004R2KN
Type of SML1004R2KN
transistor: MOSFET
Type of control channel: N
-Channel Maximum power dissipation (Pd), W: 125
Maximum drain-source voltage |Uds|, V: 1000V
Maximum gate-source voltage |Ugs|, V:
Maximum drain current |Id|, A: 3.5
Maximum junction temperature (Tj), °C: 150
Rise Time of SML1004R2KN
transistor (tr), nS:
Drain-source Capacitance (Cd), pF: 950
Maximum drain-source on-state resistance (Rds), Ohm: 4.2
Package: TO220
Equivalent transistors for SML1004R2KN
SML1004R2KN
PDF documents for downloads: PDF unavailable! See also transistors datasheet: SML1002R4CN
, SML1002RAN
, SML1002RBN
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, SML1004R2AN
, SML1004R2BN
, SML1004R2CN
, SML1004R2GN
, 2SK2866
, SML1004RAN
, SML1004RBN
, SML1004RCN
, SML1004RGN
, SML1004RKN
, SML100A9
, SML100B11
, SML100B13
. Keywords| SML1004R2KN
Datasheet | SML1004R2KN
Datenblatt | SML1004R2KN
RoHS | SML1004R2KN
Distributor | | SML1004R2KN
Application Notes | SML1004R2KN
Component | SML1004R2KN
Circuit | SML1004R2KN
Schematic | | SML1004R2KN
Equivalent | SML1004R2KN
Cross Reference | SML1004R2KN
Data Sheet | SML1004R2KN
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