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SML40J53 MOSFET (IC) Datasheet. Cross Reference Search. SML40J53 Equivalent

Type Designator: SML40J53

Type of SML40J53 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 450

Maximum drain-source voltage |Uds|, V: 400

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 53

Maximum junction temperature (Tj), °C: 150

Rise Time of SML40J53 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 7410

Maximum drain-source on-state resistance (Rds), Ohm: 0.07

Package: SOT227

SML40J53 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SML40J53 PDF doc:

1.1. sml40j53.pdf Size:23K _semelab

SML40J53
SML40J53

SML40J53 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

4.1. sml40j93.pdf Size:23K _semelab

SML40J53
SML40J53

SML40J93 SOT–227 Package Outline. Dimensions in mm (inches) 11.8 (0.463) 12.2 (0.480) 31.5 (1.240) N–CHANNEL 31.7 (1.248) 8.9 (0.350) 7.8 (0.307) 4.1 (0.161 ) 8.2 (0.322) W = 9.6 (0.378) Hex Nut M 4 4.3 (0.169 ) ENHANCEMENT MODE (4 places) 4.8 (0.187) H = 4.9 (0.193) 1 2 (4 places) HIGH VOLTAGE R POWER MOSFETS 4.0 (0.157) 0.75 (0.030) 4.2 (0.165) 0.85 (0.033) 4 3 V

5.1. sml4003.pdf Size:10K _update

SML40J53
SML40J53

SML4003 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 4A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

5.2. sml4017.pdf Size:11K _update

SML40J53
SML40J53

SML4017 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 200V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed in

5.3. sml4017a.pdf Size:11K _update

SML40J53
SML40J53

SML4017A Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar NPN Device. 3 VCEO = 200V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 25A 12.70 (0.50) All Semelab hermetically sealed products can be processed i

5.4. sml40b27.pdf Size:21K _semelab

SML40J53
SML40J53

SML40B27 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 27A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.160 2.21

5.5. sml40b37.pdf Size:21K _semelab

SML40J53
SML40J53

SML40B37 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 37A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.120 2.21

5.6. sml40h28.pdf Size:19K _semelab

SML40J53
SML40J53

SML40H28 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 28A Ω RDS(on) 0.140Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower Le

5.7. sml40b28.pdf Size:21K _semelab

SML40J53
SML40J53

SML40B28 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 400V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 28A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.140 2.21

5.8. sml40h22.pdf Size:26K _semelab

SML40J53
SML40J53

SML40H22 TO–258 Package Outline. Dimensions in mm (inches) 6.86 (0.270) N–CHANNEL 6.09 (0.240) 17.65 (0.695) 17.39 (0.685) 1.14 (0.707) ENHANCEMENT MODE 0.88 (0.035) HIGH VOLTAGE POWER MOSFETS 4.19 (0.165) 3.94 (0.155) Dia. 1 2 3 VDSS 400V ID(cont) 22A Ω RDS(on) 0.180Ω 5.08 (0.200) 3.56 (0.140) BSC BSC • Faster Switching 1.65 (0.065) 1.39 (0.055) • Lower Le

5.9. sml40a26.pdf Size:20K _semelab

SML40J53
SML40J53

SML40A26 TO–3 Package Outline. Dimensions in mm (inches) N–CHANNEL 25.15 (0.99) ENHANCEMENT MODE 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) 10.67 (0.42) HIGH VOLTAGE 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) POWER MOSFETS VDSS 400V 1 2 ID(cont) 25.5A 3 (case) Ω RDS(on) 0.150Ω 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) • Faster Switching • Lower Leakage Pin 1

5.10. sml40l57.pdf Size:20K _semelab

SML40J53
SML40J53

SML40L57 TO–264AA Package Outline. Dimensions in mm (inches) 1.80 (0.071) 2.01 (0.079) N–CHANNEL 4.60 (0.181) 19.51 (0.768) 5.21 (0.205) 26.49 (0.807) 3.10 (0.122) ENHANCEMENT MODE 3.48 (0.137) HIGH VOLTAGE POWER MOSFETS VDSS 400V 1 2 3 2.29 (0.090) ID(cont) 57A 2.69 (0.106) 2.79 (0.110) 3.18 (0.125) RDS(on) 0.070 0.48 (0.019) 0.76 (0.030) 0.84 (0.033) 1.30 (0.051) •

See also transistors datasheet: SML4080GN , SML40A26 , SML40B27 , SML40B28 , SML40B37 , SML40C15N , SML40H22 , SML40H28 , IRF5305 , SML40J93 , SML40L57 , SML40M42BFN , SML40M80AFN , SML40W44 , SML5011AFN , SML501R1AN , SML501R1BN .

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