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SML80B16 MOSFET (IC) Datasheet. Cross Reference Search. SML80B16 Equivalent

Type Designator: SML80B16

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd), W: 370

Maximum Drain-Source Voltage |Vds|, V: 800

Maximum Gate-Source Voltage |Vgs|, V:

Maximum Drain Current |Id|, A: 16

Maximum Junction Temperature (Tj), °C: 150

Rise Time (tr), nS:

Drain-Source Capacitance (Cd), pF: 3700

Maximum Drain-Source On-State Resistance (Rds), Ohm: 0.56

Package: TO247

SML80B16 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SML80B16 PDF doc:

1.1. sml80b16.pdf Size:21K _semelab

SML80B16
SML80B16

SML80B16 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 16A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.560 2.21

3.1. sml80b13.pdf Size:21K _semelab

SML80B16
SML80B16

SML80B13 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.21

3.2. sml80b13f.pdf Size:25K _semelab

SML80B16
SML80B16

SML80B13F TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 13A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.650 2.2

3.3. sml80b12.pdf Size:21K _semelab

SML80B16
SML80B16

SML80B12 TO–247AD Package Outline. Dimensions in mm (inches) 4.69 (0.185) 15.49 (0.610) N–CHANNEL 5.31 (0.209) 16.26 (0.640) 1.49 (0.059) 2.49 (0.098) ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 3.55 (0.140) 3.81 (0.150) 1 2 3 VDSS 800V 1.65 (0.065) 2.13 (0.084) 0.40 (0.016) ID(cont) 12A 0.79 (0.031) 2.87 (0.113) 3.12 (0.123) 1.01 (0.040) 1.40 (0.055) RDS(on) 0.750 2.21

See also transistors datasheet: SML8075BN , SML8075HN , SML8090AN , SML8090BN , SML8090HN , SML80A12 , SML80B12 , SML80B13 , 2N3824 , SML80H12 , SML80H14 , SML80J25 , SML80J28 , SML80J44 , SML80L27 , SML80S13 , SML80T27 .

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