SSF9N80A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSF9N80A

Type of SSF9N80A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 95

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 150

Rise Time of SSF9N80A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2020

Maximum drain-source on-state resistance (Rds), Ohm: 1.3

Package: TO3PF

Equivalent transistors for SSF9N80A

SSF9N80A PDF documents for downloads:

1.1. ssf9n80a.pdf Size:935K _samsung

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 1.3 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.000 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 6 ID A ? Continuous Drain Current (TC=100 ) 3.8 1 IDM Drain Current-Pulsed 36 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 442 O mJ IAR Avalanche Current 1 6 A O EAR Repetitive Avalanche Energy 9.5 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 95 W PD ? Linear Derating Factor 0.76 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8“ from c

5.1. ssf9n90a.pdf Size:943K _samsung

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 1.4 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 900V Low RDS(ON) : 0.938 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 6 ID A ? Continuous Drain Current (TC=100 ) 3.8 1 IDM Drain Current-Pulsed A O 36 _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ 762 O 1 IAR Avalanche Current O 6 A EAR Repetitive Avalanche Energy 1 10 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 100 W PD ? Linear Derating Factor W/ 0.8 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 “ fr

See also transistors datasheet: SSF6N90A , SSF70N10A , SSF7N60A , SSF7N80A , SSF7N90A , SSF80N06A , SSF8N80A , SSF8N90A , BUZ90 , SSF9N90A , SSH10N60A , SSH10N70 , SSH10N70A , SSH10N80A , SSH10N90A , SSH15N55 , SSH15N55A .

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