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SSP5N80A MOSFET. Datasheet pdf. Equivalent

Type Designator: SSP5N80A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 140 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 1100 pF

Maximum Drain-Source On-State Resistance (Rds): 2.2 Ohm

Package: TO220

SSP5N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSP5N80A PDF doc:

1.1. ssp5n80a.pdf Size:857K _samsung

SSP5N80A
SSP5N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.754 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

5.1. ssp5n90a.pdf Size:625K _fairchild_semi

SSP5N80A
SSP5N80A

5.2. ssp5n90a.pdf Size:856K _samsung

SSP5N80A
SSP5N80A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

Datasheet: SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A , SSP4N90AS , IRF630A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , SSP70N10A , SSP7N60A .

 


SSP5N80A
  SSP5N80A
  SSP5N80A
  SSP5N80A
 
SSP5N80A
  SSP5N80A
  SSP5N80A
  SSP5N80A
 

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