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SSP5N80A MOSFET (IC) Datasheet. Cross Reference Search. SSP5N80A Equivalent

Type Designator: SSP5N80A

Type of SSP5N80A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 140

Maximum drain-source voltage |Uds|, V: 800

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5

Maximum junction temperature (Tj), °C: 150

Rise Time of SSP5N80A transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 1100

Maximum drain-source on-state resistance (Rds), Ohm: 2.2

Package: TO220

SSP5N80A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSP5N80A PDF doc:

1.1. ssp5n80a.pdf Size:857K _samsung

SSP5N80A
SSP5N80A

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 1.754 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Ch

5.1. ssp5n90a.pdf Size:625K _fairchild_semi

SSP5N80A
SSP5N80A

5.2. ssp5n90a.pdf Size:856K _samsung

SSP5N80A
SSP5N80A

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 2.9 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 2.300 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units V

See also transistors datasheet: SSP4N60 , SSP4N60AS , SSP4N70 , SSP4N70A , SSP4N80A , SSP4N80AS , SSP4N90A , SSP4N90AS , IRF630A , SSP5N90A , SSP6N55 , SSP6N60 , SSP6N70A , SSP6N80A , SSP6N90A , SSP70N10A , SSP7N60A .

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