MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NT4N03
NTA4001N ..NTMS5835NL
NTMS5838NL ..PHP4ND40E
PHP50N03LT ..PSMN039-100YS
PSMN045-80YS ..RF1K49092
RF1K49093 ..RJK0390DPA
RJK0391DPA ..RQA0008RXDQS
RQA0009SXAQS ..SDF10N100JEC
SDF10N100JED ..SFS9624
SFS9630 ..SMG2371P
SMG2390N ..SML50B20
SML50B22 ..SPD50N03S2L-06G
SPD50P03LG ..SSG4841P
SSG4842N ..SSM3K309T
SSM3K310T ..SSPS7331P
SSPS7332N ..STB9NK60Z
STB9NK60ZD ..STD8NM60ND
STD90N03L ..STHV82
STHV82FI ..STP17NK40Z
STP17NK40ZFP ..STP60N05-16
STP60N05FI ..STV12N20
STV18N20 ..TJ30S06M3L
TJ40S04M3L ..TK9A45D
TK9A55DA ..TPCA8063-H
TPCA8064-H ..UT2304
UT2305 ..WTK6679
WTK6680 ..ZXMP3F35N8
ZXMP3F36N8 ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for SSS4N55

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.2. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.3. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

5.4. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.5. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

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