MOSFET Datasheet



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SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
03N06 ..2N5198
2N5199 ..2N6798SM
2N6799 ..2N7272R1
2N7272R2 ..2SJ378
2SJ380 ..2SK1094
2SK1095 ..2SK1460LS
2SK1461 ..2SK1891
2SK1895 ..2SK2341
2SK2342 ..2SK2709
2SK2710 ..2SK3070
2SK3070L ..2SK3472
2SK3473 ..2SK4019
2SK4020 ..2SK904
2SK905 ..3SK181-5
3SK181-6 ..7N60A
7N60F ..AO4854
AO4862 ..AOD421
AOD422 ..AON6404
AON6404A ..AOT2608L
AOT260L ..AOWF4S60
AOWF7S65 ..AP20N15GH-HF
AP20N15GI-HF ..AP40T03GP
AP40T03GS ..AP60T03GP
AP60T03GS ..AP9466GS
AP9467AGH-HF ..AP9971GJ
AP9971GM-HF ..APM9428K
APM9430 ..APT20M42HVR
APT20M42HVR ..APT8018L2VFR
APT8018L2VR ..AUIRFR3504Z
AUIRFR3607 ..BF904AWR
BF904R ..BLF7G15LS-200
BLF7G15LS-300P ..BSB053N03LPG
BSC010NE2LS ..BSS123
BSS123A ..BUK653R7-30C
BUK654R0-75C ..BUK9217-75B
BUK9219-55A ..BUZ50A-TO220M
BUZ50ASM ..CED20P10
CED21A2 ..CEP02N7G
CEP02N9 ..CPH3350
CPH3351 ..DMN66D0LW
DMP2004DMK ..FCP11N60N
FCP130N60 ..FDC6305N
FDC6306P ..FDH038AN08A1
FDH047AN08A0 ..FDMS3664S
FDMS3668S ..FDP5N50NZ
FDP5N60NZ ..FDS86140
FDS86141 ..FQA62N25C
FQA65N20 ..FQPF13N06L
FQPF13N50C ..FRM9140R
FRM9230D ..FTD04N65C
FTD06N70C ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB05CN10NG
IPB065N03LG ..IPD33CN10NG
IPD350N06LG ..IPP024N06N3G
IPP028N08N3G ..IPW50R350CP
IPW50R399CP ..IRF3415S
IRF350 ..IRF6633
IRF6633A ..IRF7507(P)
IRF7509 ..IRF9952
IRF9952Q ..IRFH5304
IRFH5306 ..IRFP241
IRFP242 ..IRFR540Z
IRFR5410 ..IRFS9232
IRFS9233 ..IRFY120
IRFY120C ..IRLHM630
IRLHS2242 ..IRLWZ34A
IRLWZ44A ..IXFH24N50
IXFH24N50Q ..IXFL32N120P
IXFL34N100 ..IXFR180N15P
IXFR18N90P ..IXFX20N120
IXFX20N120P ..IXTA60N10T
IXTA60N20T ..IXTH60N20L2
IXTH60N25 ..IXTP2N60P
IXTP2N80 ..IXTT50P085
IXTT50P10 ..KF1N60I
KF1N60L ..KML0D3P20V
KML0D4N20TV ..LS4119
MBNP2026G6 ..MTB25P06FP
MTB2P50E ..MTN2310M3
MTN2310N3 ..MTP452M3
MTP4835AQ8 ..NTB5426N
NTB5605P ..NTP6412AN
NTP6413AN ..P0903BV
P0903BVA ..P5010AT
P5010AV ..PHB50N03LT
PHB50N06LT ..PMGD280UN
PMGD290XN ..PSMN5R8-40YS
PSMN5R9-30YL ..RFD14N06L
RFD14N06LSM ..RJK0652DPB
RJK0653DPB ..RQM2201DNS
RRF015P03 ..SDF120JAB-S
SDF120JAB-U ..SFS9610
SFS9614 ..SMG2305PE
SMG2306A ..SML40H22
SML40H28 ..SPA07N60CFD
SPA07N65C3 ..SSD70N04-06D
SSD9435 ..SSF5508A
SSF5508U ..SSG6680
SSG9435 ..SSM3K44MFV
SSM3K48FU ..SSPS7321P
SSPS7330N ..STB55NF03L
STB55NF06 ..STD5NK52ZD
STD5NK60Z ..STFI10NK60Z
STFI13NK60Z ..STLT30
STM101N ..STP20NF06
STP20NF06L ..STP6N52K3
STP6N60FI ..STT2605
STT3402N ..STV60N06
STV6NA60 ..TK12E60U
TK12J55D ..TPC8003
TPC8004 ..TPCC8001-H
TPCC8002-H ..UT3443
UT3458 ..ZVN0540A
ZVN0545A ..ZXMS6004DG
ZXMS6004DT8 ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO220

Equivalent transistors for SSS4N55 - Cross-Reference Search

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.2. irfs8xx_irfs9xxx_sss4n60_sss6n60.pdf Size:26K _samsung

SSS4N55
SSS4N55


5.3. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.4. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.5. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

5.6. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

5.7. sss4n60.pdf Size:1214K _shenzhen-tuofeng-semi

SSS4N55
SSS4N55
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies .PWM motor controls, high efficient DC to DC converters and bridge circuits. ■ FEATURES ● RDS(ON)=2.5Ω@VGS=10V 4N60 ● Ultra Low gate charge(tupical 15.0nC) ● Low reverse transfer capacitance(CRSS=typica8.0pF) ● Fast switching capability ● Avalanche energy specified ● Improved dv/dt capability,high ruggedness SYMBOL SYMBOL ■ SYMBOL SYMBOL ORDERING INF ORMATION ORDERING INF ORMATION ■ ORDERING INF ORMATION ORDERING INF OR

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

 

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