MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123W
BSS123Z ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FCPF22N60NT
FCPF260N60E ..FDD13AN06A0_F085
FDD13AN06_F085 ..FDMA7630
FDMA7632 ..FDMS8320L
FDMS8320LDC ..FDPF16N50
FDPF16N50T ..FDSS2407
FDT1600N10ALZ ..FQB9P25
FQD10N20C ..FQS4900
FQS4901 ..FRX130R2
FRX130R3 ..H5N5004PL
H5N5005PL ..HAT2160H
HAT2160N ..HUF75637S3S
HUF75639G3 ..IPB065N03LG
IPB065N06LG ..IPD350N06LG
IPD35N10S3L-26 ..IPP028N08N3G
IPP030N10N3G ..IPW50R399CP
IPW60R041C6 ..IRF350
IRF3515L ..IRF6633A
IRF6635 ..IRF7509
IRF7509(N) ..IRF9953
IRF9956 ..IRFH7911
IRFH7914 ..IRFP244A
IRFP245 ..IRFR9010
IRFR9012 ..IRFS9243
IRFS9520 ..IRFY140C
IRFY240 ..IRLI2203N
IRLI2505 ..IRLZ24
IRLZ24A ..IXFH26N50Q
IXFH26N55Q ..IXFL40N110P
IXFL44N100P ..IXFR21N100Q
IXFR230N20T ..IXFX230N20T
IXFX240N15T2 ..IXTA70N075T2
IXTA70N085T ..IXTH67N10MB
IXTH68N20 ..IXTP30N08MA
IXTP30N08MB ..IXTT68P20T
IXTT69N30P ..KF3N60F
KF3N60I ..KP501V
KP502A ..MCH6421
MCH6431 ..MTBA5N10V8
MTBA5Q10Q8 ..MTN351AN3
MTN35N03J3 ..NDB6030
NDB6030L ..NTD4963N
NTD4965N ..NVD5863NL
NVD5865NL ..PMBFJ110
PMBFJ111 ..PSMN3R7-25YLC
PSMN3R7-30YLC ..RFD3055LE
RFD3055LESM ..RJK1008DPN
RJK1008DPP ..RSD050N06
RSD050N10 ..SDF150JAA
SDF150JAB ..SFT1446
SFT1450 ..SMG3402
SMG3403 ..SML50H24
SML50J44 ..SPB80P06PG
SPD01N60C3 ..SSG4394N
SSG4402N ..SSM3K116TU
SSM3K119TU ..SSP5N90A
SSP6N55 ..STB4N62K3
STB4NK60Z ..STD5N52U
STD5N62K3 ..STF8NM50N
STF8NM60ND ..STLT19
STLT19FI ..STP20N10L
STP20N10LFI ..STP6N25FI
STP6N50 ..STT10L01
STT2604 ..STV60N05
STV60N05-16 ..TK12J60U
TK12X53D ..TPC8006-H
TPC8009-H ..TPCC8003-H
TPCC8005-H ..UT3N06
UT3P01Z ..ZVN3306A
ZVN3306F ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO220

Equivalent transistors for SSS4N55

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.2. irfs8xx_irfs9xxx_sss4n60_sss6n60.pdf Size:26K _samsung

SSS4N55
SSS4N55


5.3. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.4. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

5.5. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.6. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

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