MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTC2301
WTC2302 ..ZXMN7A11K
ZXMP10A13F ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for SSS4N55

SSS4N55 PDF doc:

5.1. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.2. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.3. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

5.4. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.5. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

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