MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ136
2SJ137 ..2SJ553S
2SJ554 ..2SK1519
2SK1520 ..2SK2140
2SK2141 ..2SK2738
2SK2740 ..2SK3130
2SK3131 ..2SK3614
2SK3615 ..2SK4199LS
2SK4207 ..3N176
3N177 ..4N60K
4N60P ..AO4612
AO4613 ..AOD210
AOD2210 ..AON3402
AON3419 ..AON7820
AON7826 ..AOW11S60
AOW11S65 ..AP15P15GH-HF
AP15P15GI ..AP3986I
AP3986P ..AP4820GYT-HF
AP4835GM ..AP9410GH-HF
AP9410GM ..AP9950GP
AP9952GP-HF ..APT10050LVR
APT10057WVR ..APT50M75B2LL
APT50M75JFLL ..AUIRF4905
AUIRF4905L ..AUIRLZ44Z
BBL4001 ..BLF248
BLF278 ..BSC014N03MSG
BSC016N03LSG ..BSS123N3
BSS123W ..BUK6607-55C
BUK6607-75C ..BUK9230-100B
BUK9230-55A ..BUZ50B-TO220M
BUZ50BSM ..CED3100
CED3120 ..CEP05N65
CEP05P03 ..CPH3457
CPH3910 ..DMP2160UFDB
DMP2160UW ..FDB050AN06A0
FDB060AN08A0 ..FDD6778A
FDD6780A ..FDMS3672
FDMS4435BZ ..FDPF2710T
FDPF320N06L ..FDV305N
FDY1002PZ ..FQD30N06
FQD3N60CTM_WS ..FQU5P20
FQU8P10 ..FSL110R
FSL130D ..H7N0307LM
H7N0307LS ..HAT2171N
HAT2172H ..HUF76113T3ST
HUF76121D3 ..IPB100N06S2-05
IPB100N06S2L-05 ..IPD50P03P4L-11
IPD50P04P4L-11 ..IPP057N06N3G
IPP057N08N3G ..IPW60R299CP
IPW65R070C6 ..IRF3709S
IRF3709Z ..IRF6708S2
IRF6709S2 ..IRF7702G
IRF7703G ..IRF9Z34NS
IRF9Z34S ..IRFHS8342
IRFHS9301 ..IRFP330
IRFP3306 ..IRFRC20
IRFS11N50A ..IRFS9633
IRFS9640 ..IRFZ14A
IRFZ15 ..IRLIZ14A
IRLIZ14G ..ISL9N303AP3
ISL9N303AS3 ..IXFH36N55Q2
IXFH36N60P ..IXFM20N60
IXFM21N50 ..IXFR32N80Q3
IXFR34N80 ..IXFX32N80P
IXFX32N80Q3 ..IXTA98N075T7
IXTB30N100L ..IXTH88N15
IXTH88N30P ..IXTP450P2
IXTP460P2 ..IXTU02N50D
IXTU05N100 ..KF5N50FZA
KF5N50IZ ..KP523B
KP7128A ..MGSF1N03L
MGSF1P02 ..MTC4503Q8
MTC4503Q8G ..MTN4N01Q8
MTN4N60AE3 ..NDB7060
NDB7060L ..NTD5807N
NTD5862N ..NX2301P
NX3008CBKS ..PMF280UN
PMF290XN ..PSMN4R5-40PS
PSMN4R6-60PS ..RFD8P06ESM
RFD8P06LE ..RJK1056DPB
RJK1211DNS ..RSE002P03
RSF010P05 ..SDF20N60JEC
SDF20N60JED ..SFU9224
SFU9310 ..SMK0160I
SMK0160IS ..SML50S26
SML50S30 ..SPD03N60S5
SPD04N50C3 ..SSG4463P
SSG4470STM ..SSM3K128TU
SSM3K12T ..SSP7200N
SSP7300N ..STB5N52K3
STB5N62K3 ..STD5NM50-1
STD5NM60 ..STFI20NK50Z
STFW12N120K5 ..STM105N
STM121N ..STP20NM50FD
STP20NM60 ..STP6NA50FI
STP6NA60 ..STT3434N
STT3457P ..STW10NK60Z
STW10NK80Z ..TK13A55DA
TK13A60D ..TPC8018-H
TPC8020-H ..TPCC8064-H
TPCC8065-H ..UT4406
UT4410 ..ZVN4206AV
ZVN4206G ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO220

Equivalent transistors for SSS4N55

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.2. irfs8xx_irfs9xxx_sss4n60_sss6n60.pdf Size:26K _samsung

SSS4N55
SSS4N55


5.3. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.4. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

5.5. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.6. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

(C) 2005 All Right reserved Bipolar || MOSFET || IGBT | | Manufacturer Sites || SMD Code || Packages