All MOSFET. SSS4N55 Datasheet

 

SSS4N55 MOSFET. Datasheet pdf. Equivalent

Type Designator: SSS4N55

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 35 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Drain Current |Id|: 4 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO220

SSS4N55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.2. irfs8xx_irfs9xxx_sss4n60_sss6n60.pdf Size:26K _samsung

SSS4N55



5.3. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.4. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55

SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

5.5. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.6. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.7. sss4n60.pdf Size:1214K _shenzhen-tuofeng-semi

SSS4N55
SSS4N55

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

Datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

 


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