MOSFET Datasheet


Enter a full or partial manufacturer part number with a minimum of 3 letters or numbers
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AO4806
AO4807 ..AOD409
AOD4102 ..AP16N50I-HF
AP16N50W ..AP3990P
AP3990R-HF ..AP4953GM-HF
AP4955GM ..AP9412GJ
AP9412GP ..AP9962AGP-HF
AP9962BGH-HF ..APT30M40JVFR
APT30M40JVR ..AUIRF7379Q
AUIRF7416Q ..BF1109
BF1109R ..BLF578
BLF578XR ..BSC027N04LSG
BSC028N06LS3G ..BSS192P
BSS209PW ..BUK6C1R5-40C
BUK6E2R0-30C ..BUK9509-40B
BUK9509-75A ..BUZ74A
BUZ76 ..CED6086
CED6186 ..CEP13N10
CEP13N10L ..DM601
DM616 ..DMP3056LSS
DMP3098L ..FDB024N04AL7
FDB024N06 ..FDD3860
FDD3860 ..FDMC2512SDC
FDMC2514SDC ..FDN339AN
FDN340P ..FDR858P
FDS2572 ..FDT3N40
FDT434P ..FQB6N80
FQB7N60 ..FQPF22P10
FQPF27N25 ..FRM450H
FRM450R ..H04N60F
H04N65E ..HAT1126RJ
HAT1127H ..HN1K03FU
HN1K04FU ..IPA60R280C6
IPA60R280E6 ..IPB80P03P4L-04
IPB80P03P4L-07 ..IPI50N10S3L-16
IPI50R140CP ..IPP70N10S3-12
IPP70N10S3L-12 ..IRF1405
IRF1405L ..IRF623FI
IRF624 ..IRF7389
IRF740 ..IRF9310
IRF9317 ..IRFE230
IRFE310 ..IRFM460
IRFM9140 ..IRFR120A
IRFR120N ..IRFS624
IRFS624A ..IRFU420
IRFU420A ..IRL530N
IRL530NL ..IRLTS6342
IRLU010 ..IXFH12N100Q
IXFH12N120 ..IXFK360N10T
IXFK360N15T2 ..IXFN82N60P
IXFN82N60Q3 ..IXFV12N90P
IXFV12N90PS ..IXTA200N055T2
IXTA200N055T2-7 ..IXTH300N04T2
IXTH30N25 ..IXTP12N50PM
IXTP130N065T2 ..IXTQ86N20T
IXTQ86N25T ..J211
J212 ..KMB054N40DA
KMB054N40DB ..KTK921U
KTK951S ..MTB17A03Q8
MTB17A03V8 ..MTN1N60A3
MTN1N65I3 ..MTP405CJ3
MTP405J3 ..NDT454P
NDT455N ..NTMS4807N
NTMS4816N ..PHP3N40E
PHP3N50E ..PSMN030-150B
PSMN030-150P ..RD30HVF1
RD45HMF1 ..RJK0364DPA
RJK0365DPA ..RQ1E070RP
RQ1E075XN ..SDF054JAA-U
SDF054JAB-D ..SFS2955
SFS9510 ..SMG2342N
SMG2342NE ..SML5050CN
SML5085AN ..SPD15P10PG
SPD15P10PLG ..SSG4536C
SSG4542C ..SSM3K16FS
SSM3K16FU ..SSP7464N
SSP7480N ..STB80PF55
STB85NF3LL ..STD8N10-1
STD8N10L ..STH8NA60
STH8NA60FI ..STP165N10F4
STP16N65M5 ..STP5NK50Z
STP5NK52ZD ..STU85N3LH5
STU8N65M5 ..TJ10S04M3L
TJ11A10M3 ..TK8A50DA
TK8A55DA ..TPCA8054-H
TPCA8055-H ..UT120N03
UT12N10 ..WTD9575
WTD9973 ..ZXMP2120G4
ZXMP3A13F ..ZXMS6006SG
 
SSS4N55 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

SSS4N55 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm:

Package: TO220

Equivalent transistors for SSS4N55

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 600 o C Continuous Drain Current (TC=25 ) 2.3 ID A Continuous Drain Current (TC=100 oC 1.5 ) IDM Drain Current-Pulsed 1 16 A O VGS Gate-to-Source Voltage _ V 2 EAS Single Pulsed Avalanche Energy 260 mJ O IAR Avalanche Current 1 2.3 A O EAR Repetitive Avalanche Energy 1 mJ 3.3 O 3 dv/dt Peak Diode Recovery dv/dt 3.0 V/ns O Total Power Dissipation (TC=25 oC) 33 W PD o Linear Derating Factor C 0.26 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range o C Maximum Lead Temp. for Soldering TL 300 Pur

5.2. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed A O 16 VGS Gate-to-Source Voltage _ V EAS Single Pulsed Avalanche Energy 2 mJ 414 O 1 IAR Avalanche Current O 2.5 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8 f

5.3. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 ) 2.5 ID A ? Continuous Drain Current (TC=100 ) 1.6 1 IDM Drain Current-Pulsed 16 O A _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 250 O mJ IAR Avalanche Current 1 2.5 A O EAR Repetitive Avalanche Energy 4 1 mJ O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor 0.32 W/ Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? Maximum Lead Temp. for Soldering 300 TL Purposes, 1/8

5.4. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55
SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage 800 V ? Continuous Drain Current (TC=25 C) 2.8 ID A ? Continuous Drain Current (TC=100 C) 1.8 1 IDM Drain Current-Pulsed O A 18 + 30 _ VGS Gate-to-Source Voltage V 2 EAS Single Pulsed Avalanche Energy 314 O mJ IAR Avalanche Current 1 2.8 A O EAR Repetitive Avalanche Energy 4 mJ 1 O dv/dt Peak Diode Recovery dv/dt 3 2.0 V/ns O ? Total Power Dissipation (TC=25 C) 40 W PD ? Linear Derating Factor 0.32 W/ C Operating Junction and - 55 to +150 TJ , TSTG Storage Temperature Range ? C Maximum Lead Temp. for So

5.5. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55
Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units VDSS Drain-to-Source Voltage V 900 ? Continuous Drain Current (TC=25 ) 2.8 ID A ? Continuous Drain Current (TC=100 ) 1.8 IDM Drain Current-Pulsed 1 18 A O _ VGS Gate-to-Source Voltage V EAS Single Pulsed Avalanche Energy 2 mJ O 519 1 IAR Avalanche Current O 2.8 A EAR Repetitive Avalanche Energy 1 4 mJ O 3 dv/dt Peak Diode Recovery dv/dt V/ns 1.5 O ? Total Power Dissipation (TC=25 ) 40 W PD ? Linear Derating Factor W/ 0.32 Operating Junction and TJ , TSTG - 55 to +150 Storage Temperature Range ? Maximum Lead Temp. for Soldering TL 300 Purposes, 1/8

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Keywords

 SSS4N55 Datasheet  SSS4N55 Datenblatt  SSS4N55 RoHS  SSS4N55 Distributor
 SSS4N55 Application Notes  SSS4N55 Component  SSS4N55 Circuit  SSS4N55 Schematic
 SSS4N55 Equivalent  SSS4N55 Cross Reference  SSS4N55 Data Sheet  SSS4N55 Fiche Technique

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