All MOSFET Datasheet

 

SSS4N55 MOSFET (IC) Datasheet. Cross Reference Search. SSS4N55 Equivalent

Type Designator: SSS4N55

Type of SSS4N55 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 550

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4

Maximum junction temperature (Tj), °C: 150

Rise Time of SSS4N55 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 3

Package: TO220

SSS4N55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SSS4N55 PDF doc:

5.1. sss4n60as.pdf Size:501K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 600 V Avalanche Rugged Technology RDS(on) = 2.2 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.3 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 600V Lower RDS(ON) : 2.037 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Unit

5.2. irfs8xx_irfs9xxx_sss4n60_sss6n60.pdf Size:26K _samsung

SSS4N55
SSS4N55



5.3. sss4n90a.pdf Size:496K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 5.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 4.181 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.4. sss4n80as.pdf Size:125K _samsung

SSS4N55
SSS4N55

SSS4N80AS Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 3.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area TO-220F Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 2.450 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Character

5.5. sss4n80a.pdf Size:500K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS(on) = 4.0 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.5 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 800V Low RDS(ON) : 3.400 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.6. sss4n90as.pdf Size:852K _samsung

SSS4N55
SSS4N55

Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS(on) = 3.7 ? Rugged Gate Oxide Technology Lower Input Capacitance ID = 2.8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 A (Max.) @ VDS = 900V Low RDS(ON) : 3.054 ? (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value Units

5.7. sss4n60.pdf Size:1214K _shenzhen-tuofeng-semi

SSS4N55
SSS4N55

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS4N60 Technology co.,Ltd 4 Amps 600Volts 4 Amps 600Volts 4 Amps 600Volts 4 Amps,600Volts N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET N-CHANNEL MOSFET ■ DESCRIPTION The SSS4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance

See also transistors datasheet: SSS10N60A , SSS1N50A , SSS1N60A , SSS2N60A , SSS2N80A , SSS2N90A , SSS3N80A , SSS3N90A , BUZ11 , SSS4N60 , SSS4N60AS , SSS4N80A , SSS4N80AS , SSS4N90A , SSS4N90AS , SSS5N80A , SSS5N90A .

Search Terms:

 SSS4N55 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


SSS4N55
  SSS4N55
  SSS4N55
  SSS4N55
 
SSS4N55
  SSS4N55
  SSS4N55
  SSS4N55
 

social 

LIST

Last Update

MOSFET: RFP2N18L | RFL1P10 | RFL1P08 | RFL2N06L | RFL2N06 | RFL2N05L | RFL2N05 | RFL1N20L | RFL1N20 | RFL1N18L | RFL1N18 | RFL1N10 | RFL1N08 | SM7308CSKP | SM6043CSQ |

Enter a full or partial SMD code with a minimum of 2 letters or numbers