STD12N05-1 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STD12N05-1

Type of STD12N05-1 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C: 175

Rise Time of STD12N05-1 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 450

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: IPAK

Equivalent transistors for STD12N05-1

STD12N05-1 PDF documents for downloads:

2.1. std12n05.pdf Size:177K _st

STD12N05 STD12N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05 50 V < 0.15 ? 12 A STD12N06 60 V < 0.15 ? 12 A TYPICAL RDS(on) = 0.1 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE APPLICATION ORIENTED IPAK DPAK CHARACTERIZATION TO-251 TO-252 THROUGH-HOLE IPAK (TO-251) POWER (Suffix ”-1”) (Suffix ”T4”) PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD12N05 STD12N06 V Drain-source Voltage (V = 0) 50 60 V DS GS VDG R Drain- gate Voltag

4.1. std12n65m5_stf12n65m5_sti12n65m5_stp12n65m5_stu12n65m5.pdf Size:1040K _st

STD12N65M5, STF12N65M5, STI12N65M5 STP12N65M5, STU12N65M5 N-channel 650 V, 0.39 ?, 8.5 A MDmesh™ V Power MOSFET DPAK, I2PAK, TO-220FP, TO-220, IPAK Features VDSS @ RDS(on) Type ID PTOT 3 TJmax max 2 3 1 2 1 STD12N65M5 8.5 A 70 W IPAK TO-220 STF12N65M5 8.5 A(1) 25 W 3 STI12N65M5 710 V < 0.43 ? 8.5 A 70 W 1 STP12N65M5 8.5 A 70 W DPAK STU12N65M5 8.5 A 70 W 3 1. Limited only by maximum temperature allowed 2 3 2 1 1 ¦ Worldwide best RDS(on) * area TO-220FP I?PAK ¦ Higher VDSS rating and high dv/dt capability ¦ Excellent switching performance ¦ Easy to drive ¦ 100% avalanche tested Figure 1. Internal schematic diagram Application D(2) Switching applications Description G(1) The devices are N-channel MDmeshTM V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known S(3) PowerMESH™ horizontal layout structure. The resulting product has extremely low on- resistance,

4.2. stb12nm50nd_std12nm50nd_stf12nm50nd.pdf Size:1025K _st

STB12NM50ND STD12NM50ND, STF12NM50ND N-channel 500 V, 0.29 ?, 11 A, FDmesh™ II Power MOSFET (with fast diode) in D2PAK, DPAK, TO-220FP Features Type VDSS (@Tjmax) RDS(on) max ID STB12NM50ND 550 V 0.38 ? 11 A STD12NM50ND 550 V 0.38 ? 11 A STF12NM50ND 550 V 0.38 ? 11 A 3 3 3 2 1 1 1 ¦ 100% avalanche tested D2PAK DPAK TO-220FP ¦ Low input capacitance and gate charge ¦ Low gate input resistance Application ¦ Switching applications Figure 1. Internal schematic diagram Description FDmesh™ technology combines the MDmesh™ features with an intrinsic fast-recovery body D(2) diode. The resulting product has reduced on- resistance and fast switching commutations, making it especially suitable for bridge topologies where low trr is required. G(1) S(3) AM01475v1 Table 1. Device summary Order codes Marking Package Packaging STB12NM50ND 12NM50ND D2PAK Tape and reel STD12NM50ND 12NM50ND DPAK Tape and reel STF12NM50ND 12NM50ND TO-220FP Tube June 2009 Doc ID 1493

4.3. std12n.pdf Size:176K _st

STD12N05L STD12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD12N05L 50 V < 0.15 ? 12 A STD12N06L 60 V < 0.15 ? 12 A TYPICAL R = 0.115 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 3 2 LOW GATE CHARGE 1 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE APPLICATION ORIENTED IPAK DPAK CHARACTERIZATION TO-251 TO-252 THROUGH-HOLE IPAK (TO-251) POWER (Suffix ”-1”) (Suffix ”T4”) PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX ”T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STD12N05L STD12N06L V Drain-source Voltage (V = 0) 50 60 V DS

4.4. std12ne06l.pdf Size:81K _st

STD12NE06L ? N - CHANNEL 60V - 0.09? - 12A - DPAK SINGLE FEATURE SIZE? POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06L 60 V < 0.12 ? 12 A TYPICAL R = 0.09 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252 (Suffix ”T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transi- stor shows extremely high packing density for low INTERNAL SCHEMATIC DIAGRAM on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a re- markable manufacturingreproducibility. APPLICATIONS DC MOTOR CONTROL (DISK DRIVES,etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Vo

4.5. std12nf06.pdf Size:443K _st

STD12NF06 N-CHANNEL 60V - 0.08 ? - 12A IPAK/DPAK STripFET™ II POWER MOSFET TYPE VDSS RDS(on) ID STD12NF06 60 V <0.1 ? 12 A TYPICAL RDS(on) = 0.08? EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE 3 3 THROUGH-HOLE IPAK (TO-251) POWER 2 1 PACKAGE IN TUBE (SUFFIX “-1") 1 SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK POWER PACKAGE IN TAPE & REEL TO-251 TO-252 (SUFFIX “T4") (Suffix “-1”) (Suffix “T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip- based process. The resulting transistor shows extremely INTERNAL SCHEMATIC DIAGRAM high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS HIGH CURRENT, HIGH SWITCHING SPEED MOTOR CONTROL , AUDIO AMPLIFIERS SOLENOID AND RELAY DRIVERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter

4.6. stb12nm50n_std12nm50n_sti12nm50n_stf12nm50n_stp12nm50n.pdf Size:586K _st

STB12NM50N,STD12NM50N,STI12NM50N STF12NM50N, STP12NM50N N-channel 500 V, 0.29 ?, 11 A MDmesh™ II Power MOSFET TO-220 - DPAK - D2PAK - I2PAK - TO-220FP Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 1 1 STB12NM50N 550 V 0.38 ? 11 A I?PAK TO-220 STD12NM50N 550 V 0.38 ? 11 A 3 1 STI12NM50N 550 V 0.38 ? 11 A DPAK STF12NM50N 550 V 0.38 ? 11 A (1) STP12NM50N 550 V 0.38 ? 11 A 3 3 2 1 1 ¦ 100% avalanche tested D?PAK TO-220FP ¦ Low input capacitance and gate charge ¦ Low gate input resistance Application Figure 1. Internal schematic diagram ¦ Switching applications Description This series of devices is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking

4.7. std12nf06l.pdf Size:321K _st

STD12NF06L STD12NF06L-1 N-channel 60V - 0.08? - 12A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD12NF06L 60V <0.1? 12A 3 3 STD12NF06L-1 60V <0.1? 12A 2 1 1 ¦ Exceptional dv/dt capability DPAK IPAK ¦ Low gate charge Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Internal schematic diagram Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Switching application Order codes Part number Marking Package Packaging STD12NF06LT4 D12NF06L DPAK Tape & reel STD12NF06L-1 D12NF06L IPAK Tube February 2007 Rev 6 1/14 www.st.com 14 Contents STD12NF06L Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2

4.8. std12ne06.pdf Size:106K _st

STD12NE06 ? N - CHANNEL 60V - 0.08? - 12A - DPAK SINGLE FEATURE SIZE? POWER MOSFET TYPE VDSS RDS(on) ID STD12NE06 60 V < 0.10 ? 12 A TYPICAL R = 0.08 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED 3 CHARACTERIZATION 1 FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES DPAK OFFICES TO-252 (Suffix ”T4”) DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size?” strip-based process. The resulting transi- stor shows extremely high packing density for low on-resistance, rugged avalanche characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore a re- markable manufacturingreproducibility. APPLICATIONS DC MOTOR CONTROL (DISK DRIVES,etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Volt

4.9. std12nf06_std12nf06t4.pdf Size:335K _st

STD12NF06 STD12NF06T4 N-channel 60 V, 0.08?, 12 A, DPAK, IPAK STripFET™ II Power MOSFET Features VDSSS RDS(on) ID Type STD12NF06 60V <0.1? 12A 3 3 STD12NF06T4 60V <0.1? 12A 2 1 1 DPAK IPAK ¦ Exceptional dv/dt capability ¦ Low gate charge Applications ¦ Switching application Figure 1. Internal schematic diagram Description This Power MOSFET is the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Table 1. Device summary Order codes Marking Package Packaging STD12NF06T4T4 D12NF06 DPAK Tape and reel STD12NF06T4-1 D12NF06 IPAK Tube November 2009 Doc ID 8431 Rev 7 1/14 www.st.com 14 Contents STD12NF06, STD12NF06T4 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

See also transistors datasheet: SSW5N90A , SSW6N70A , SSW7N60A , STD10N10-1 , STD10N10L-1 , STD10N10LT4 , STD10N10T4 , STD12N05 , IRL3803 , STD12N05L , STD12N05L-1 , STD12N05LT4 , STD12N05T4 , STD12N06 , STD12N06-1 , STD12N06L , STD12N06L-1 .

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