STD20N06T4 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STD20N06T4

Type of STD20N06T4 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 80

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 20

Maximum junction temperature (Tj), °C: 175

Rise Time of STD20N06T4 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 2800

Maximum drain-source on-state resistance (Rds), Ohm: 0.045

Package: DPAK

Equivalent transistors for STD20N06T4

STD20N06T4 PDF documents for downloads:

4.1. std20nf06.pdf Size:345K _st

STD20NF06 N-channel 60V - 0.032? - 24A - DPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06 60V <0.040? 24A ¦ Exceptional dv/dt capability 3 ¦ Application oriented characterization 1 ¦ 100% avalanche tested DPAK Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche Internal schematic diagram characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Switching application Order code Part number Marking Package Packaging STD20NF06T4 D20NF06 DPAK Tape & reel February 2007 Rev 5 1/13 www.st.com 13 Contents STD20NF06 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . .

4.2. std20nf06l_std20nf06l-1.pdf Size:414K _st

STD20NF06L STD20NF06L-1 N-channel 60V - 0.032? - 24A - DPAK - IPAK STripFET™ II Power MOSFET General features Type VDSS RDS(on) ID STD20NF06L 60V <0.040? 24A STD20NF06L-1 60V <0.040? 24A 3 3 ¦ Exceptional dv/dt capability 2 1 1 ¦ 100% avalanche tested IPAK DPAK ¦ Application oriented characterization Description This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size™” stripbased process. The resulting transistor shows extremely high packing density Internal schematic diagram for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. Applications ¦ Switching application Order codes Part number Marking Package Packaging STD20NF06L D20NF06L DPAK Tape & reel STD20NF06L-1 D20NF06L-1 IPAK Tube July 2006 Rev 4 1/14 www.st.com 14 Contents STD20NF06L - STD20NF06L-1 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . .

4.3. std20ne03l.pdf Size:105K _st

STD20NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE? ” POWER MOSFET TYPE VDSS RDS(on ) ID STD20NE03L 30 V < 0.020 ? 20 A TYPICAL R = 0.016 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED o LOW GATE CHARGE A 100 C 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 DESCRIPTION This Power MOSFET is the latest development of IPAK DPAK SGS-THOMSON unique ”Single Feature Size? ” TO-251 TO-252 strip-based process. The resulting transistor (Suffix ”-1”) (Suffix ”T4”) shows extremely high packing density for low on- resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark- able manufacturingreproducibility. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS IN HIGH PERFORMANCE VRMs AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Pa

4.4. std20nf10.pdf Size:331K _st

STD20NF10 N-channel 100V - 0.038? - 100A - DPAK Low gate charge STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STD20NF10 100V <0.045? 25A(1) 1. Current limited by package 3 ¦ Exceptional dv/dt capability 1 ¦ Application oriented characterization DPAK Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- Figure 1. Internal schematic diagram efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. Applications ¦ Switching applications Table 1. Device summary Part number Marking Package Packaging STD20NF10T4 D20NF10 DPAK Tape & reel August 2007 Rev 5 1/13 www.st.com 13 Contents STD20NF10 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . .

4.5. std20nf20_stf20nf20_stp20nf20.pdf Size:909K _st

STD20NF20 STF20NF20, STP20NF20 N-channel 200 V, 0.10 ?, 18 A DPAK, TO-220, TO-220FP low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID PW STD20NF20 200 V < 0.125 ? 18 A 110 W 3 3 STF20NF20 200 V < 0.125 ? 18 A 30 W 2 2 1 1 STP20NF20 200 V < 0.125 ? 18 A 110 W TO-220 TO-220FP ¦ Exceptional dv/dt capability ¦ Low gate charge 3 1 ¦ 100% avalanche tested DPAK Application ¦ Switching applications Figure 1. Internal schematic diagram Description This Power MOSFET series realized with D(2) STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high- efficiency isolated DC-DC converters. G(1) S(3) AM01475v1 Table 1. Device summary Order codes Marking Package Packaging STD20NF20 20NF20 DPAK Tape and reel STF20NF20 20NF20 TO-220FP Tube STP20NF20 20NF20 TO-220 Tube December 2009 Doc ID 13154 Rev 4 1/15 www.st.com 1

See also transistors datasheet: STD17N06-1 , STD17N06L , STD17N06L-1 , STD17N06LT4 , STD17N06T4 , STD1NA60-1 , STD1NA60T4 , STD20N06-1 , 3SK74 , STD2N50-1 , STD2N50T4 , STD2NA60-1 , STD2NA60T4 , STD3N25-1 , STD3N25T4 , STD3N30-1 , STD3N30L .

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