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STD6N10T4 MOSFET (IC) Datasheet. Cross Reference Search. STD6N10T4 Equivalent

Type Designator: STD6N10T4

Type of STD6N10T4 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 35

Maximum drain-source voltage |Uds|, V: 100

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 6

Maximum junction temperature (Tj), °C: 175

Rise Time of STD6N10T4 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 400

Maximum drain-source on-state resistance (Rds), Ohm: 0.45

Package: DPAK

STD6N10T4 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STD6N10T4 PDF doc:

3.1. std6n10.pdf Size:344K _st

STD6N10T4
STD6N10T4

STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD6N10 100 V < 0.45 ? 6 A TYPICAL R = 0.35 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251

5.1. std6nf10.pdf Size:266K _st

STD6N10T4
STD6N10T4

STD6NF10 N-CHANNEL 100V - 0.22 ? - 6A IPAK/DPAK LOW GATE CHARGE STripFET™ POWER MOSFET TYPE VDSS RDS(on) ID STD6NF10 100 V <0.250 ? 6 A TYPICAL RDS(on) = 0.22 ? EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 LOW THRESHOLD DRIVE 2 1 THROUGH-HOLE IPAK (TO-251) POWER 1 PACKAGE IN TUBE (SUFFIX “-1") IPAK DPAK SURFACE-MOUNTING DPAK (TO-252) TO-251 TO-252 POWER PACKAGE I

5.2. stp6nk50z_stf6nk50z_std6nk50z.pdf Size:399K _st

STD6N10T4
STD6N10T4

STP6NK50Z - STF6NK50Z STD6NK50Z N-CHANNEL 500V - 0.93? - 5.6A TO-220/TO-220FP/DPAK Zener-Protected SuperMESH™ MOSFET TYPE VDSS RDS(on) ID Pw STP6NK50Z 500 V <1.2? 5.6 A 90 W STF6NK50Z 500 V <1.2? 5.6 A 25 W STD6NK50Z 500 V <1.2? 5.6 A 90 W TYPICAL RDS(on) = 0.93 ? 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 100% AVALANCHE TESTED GATE CHARGE MINIMIZED TO-220 TO-220FP VERY LOW INTRINS

5.3. std6nc40.pdf Size:272K _st

STD6N10T4
STD6N10T4

STD6NC40 N-CHANNEL 400V - 0.75? - 5A - DPAK / IPAK PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STD6NC40 400V < 1 ? 5A TYPICAL RDS(on) = 0.75? EXTREMELY HIGH dv/dt CAPABILITY 3 3 2 100% AVALANCHE TESTED 1 1 GATE CHARGE MINIMIZED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL DPAK IPAK ADD SUFFIX “-1” FOR ORDERING IN IPAK DESCRIPTION The PowerMESH™II is the evolution of the first

5.4. std6nf10_stu6nf10.pdf Size:327K _st

STD6N10T4
STD6N10T4

STD6NF10 STU6NF10 N-channel 100 V, 0.22 ?, 6 A, DPAK, IPAK low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) max ID STD6NF10 100 V < 0.250 ? 6 A STU6NF10 100 V < 0.250 ? 6 A 3 3 2 1 1 ¦ Exceptional dv/dt capability IPAK ¦ 100% avalanche tested DPAK Application ¦ Switching applications Description This Power MOSFET series realized with Figure 1. Internal schemati

5.5. std6n62k3_stf6n62k3_stp6n62k3_stu6n62k3.pdf Size:427K _st

STD6N10T4
STD6N10T4

STD6N62K3 - STF6N62K3 STP6N62K3 - STU6N62K3 N-channel 620 V, 1.1 ?, 5.5 A, IPAK, DPAK, TO-220,TO-220FP SuperMESH3™ Power MOSFET Features 3 RDS(on) 3 Type VDSS ID Pw 2 1 max 1 DPAK STD6N62K3 620 V < 1.28 ? 5.5 A 90 W IPAK STF6N62K3 620 V < 1.28 ? 5.5 A(1) 25 W STP6N62K3 620 V < 1.28 ? 5.5 A 90 W STU6N62K3 620 V < 1.28 ? 5.5 A 90 W 1. Limited by package 3 3 2 2 1 ¦ 100% avala

5.6. stb6n52k3_std6n52k3_stf6n52k3_stp6n52k3.pdf Size:1153K _st

STD6N10T4
STD6N10T4

STB6N52K3, STD6N52K3 STF6N52K3, STP6N52K3 N-channel 525 V, 1 ?, 5 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) 3 Order codes VDSS ID Pw max 1 3 2 STB6N52K3 5 A 70 W DPAK 1 STD6N52K3 5 A(1) 25 W TO-220FP 525 V < 1.2 ? STF6N52K3 5 A 70 W STP6N52K3 1. Limited by package 3 3 ¦ 100% avalanche tested 2 1 1 D?PAK TO-220 ¦ Extremely high dv/dt cap

5.7. stb6nm60n_std6nm60n_stf6nm60n_stp6nm60n.pdf Size:685K _st

STD6N10T4
STD6N10T4

STx6NM60N N-channel 600 V, 0.85 ?, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 STB6NM60N 650 V < 0.92 ? 4.6 A 2 2 1 1 STD6NM60N 650 V < 0.92 ? 4.6 A TO-220 TO-220FP STD6NM60N-1 650 V < 0.92 ? 4.6 A 3 1 STF6NM60N 650 V < 0.92 ? 4.6 A (1) D?PAK STP6NM60N 650 V < 0.92 ? 4.6 A 3 3 1 2 1 1. Limited only by

5.8. sti6n62k3_stp6n62k3_stu6n62k3_stf6n62k3_std6n62k3.pdf Size:1146K _st

STD6N10T4
STD6N10T4

STD6N62K3, STF6N62K3 STI6N62K3, STP6N62K3, STU6N62K3 N-channel 620 V, 0.95 ?, 5.5 A SuperMESH3™ Power MOSFET in IPAK, DPAK, TO-220,TO-220FP, I?PAK Features RDS(on) 3 Order codes VDSS ID Pw 2 max. 1 3 2 1 IPAK STD6N62K3 90 W I?PAK STF6N62K3 30 W 3 STI6N62K3 620 V < 1.2 ? 5.5 A 90 W 1 STP6N62K3 90 W DPAK STU6N62K3 90 W ¦ 100% avalanche tested 3 3 2 1 2 1 ¦ Extremely hig

See also transistors datasheet: STD3NA50T4 , STD4N25-1 , STD4N25T4 , STD4NA40-1 , STD4NA40T4 , STD5N20-1 , STD5N20T4 , STD6N10-1 , IRF1404 , STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , STD8N10T4 .

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