STD8N10T4 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STD8N10T4

Type of STD8N10T4 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 45

Maximum drain-source voltage |Uds|, V: 100V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 8

Maximum junction temperature (Tj), °C: 175

Rise Time of STD8N10T4 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 450

Maximum drain-source on-state resistance (Rds), Ohm: 0.3

Package: DPAK

Equivalent transistors for STD8N10T4

STD8N10T4 PDF documents for downloads:

5.1. stf8nm60n_std8nm60n_stb8nm60n_stp8nm60n.pdf Size:698K _st

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature allowed 1 DPAK TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description G(1) This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to S(3) yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM01475v1 Table 1. Device summary Order c

5.2. std8n06.pdf Size:341K _st

STD8N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STD8N06 60 V < 0.25 ? 8 A TYPICAL R = 0.21 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 LOW GATE CHARGE 3 2 HIGH CURRENT CAPABILITY 1 1 175oC OPERATING TEMPERATURE APPLICATION ORIENTED CHARACTERIZATION IPAK DPAK THROUGH-HOLE IPAK (TO-251) POWER TO-251 TO-252 PACKAGE IN TUBE (SUFFIX "-1") (Suffix "-1") (Suffix "T4") SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain- gate Voltage (RGS = 20 k?)60 V VGS Gate-source Voltage ± 20 V ID Drain Curr

5.3. stb8n65m5_std8n65m5_stf8n65m5_stu8n65m5_stp8n65m5_sti8n65m5.pdf Size:1298K _st

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDSS rating 2 3 2 1 1 D?PAK ¦ High dv/dt capability I?PAK IPAK ¦ Excellent switching performance ¦ Easy to drive Figure 1. Internal schematic diagram ¦ 100% avalanche tested Applications D(2) ¦ Switching applications Description G(1) These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known S(3) PowerMESH™ horizontal layout structure. The resulting product has extremely low on- AM01475v1 resistance, which is unmatched among silicon- based Power MOSFETs, maki

5.4. std8ns25.pdf Size:122K _st

STD8NS25 N-CHANNEL 250V - 0.38? - 8A DPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD8NS25 250 V < 0.45 ? 8 A TYPICAL RDS(on) = 0.38 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 1 DPAK DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performance. The new patented STrip layout cou- pled with the Company’s proprietary edge termina- INTERNAL SCHEMATIC DIAGRAM tion structure, makes it suitable in coverters for lighting applications. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 250 V VDGR Drain-gate Voltage (RGS = 20 k?) 250 V VGS Gate- source Voltage ± 20 V ID Drain Current (continuos) at TC = 25°C 8A ID Drain Current (continuos) at

5.5. std8nm60nd_stf8nm60nd_stp8nm60nd_stu8nm60nd.pdf Size:726K _st

STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 ? , 7 A, FDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STD8NM60ND 650 V < 0.70 ? 7 A 1 IPAK STF8NM60ND 650 V < 0.70 ? 7 A TO-220 STP8NM60ND 650 V < 0.70 ? 7 A(1) STU8NM60ND 650 V < 0.70 ? 7 A 1. Limited only by maximum temperature allowed 3 3 1 2 1 ¦ The worldwide best RDS(on)* area amongst the DPAK fast recovery diode devices TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram ¦ Extremely high dv/dt and avalanche capabilities Application ¦ Switching applications Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced on- resistance and fast switching with

5.6. stb8n65m5_std8n65m5_stf8n65m5_sti8n65m5_stp8n65m5_stu8n65m5.pdf Size:1239K _st

STB8N65M5, STD8N65M5, STF8N65M5 STI8N65M5, STP8N65M5, STU8N65M5 N-channel 650 V, 0.56 ?, 7 A MDmesh™ V Power MOSFET in D?PAK, I?PAK, TO-220, TO-220FP, DPAK and IPAK Features Type VDSS @ TJmax RDS(on) max. ID 3 STB8N65M5 1 3 3 STD8N65M5 2 2 DPAK 1 1 STF8N65M5 TO-220 710 V < 0.6 ? 7 A TO-220FP STI8N65M5 STP8N65M5 STU8N65M5 ¦ Worldwide best RDS(on) * area 3 3 1 ¦ Higher VDSS rating 2 3 2 1 1 D?PAK ¦ High dv/dt capability I?PAK IPAK ¦ Excellent switching performance ¦ Easy to drive Figure 1. Internal schematic diagram ¦ 100% avalanche tested Application D(2) Switching applications Description G(1) These devices are N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known S(3) PowerMESH™ horizontal layout structure. The resulting product has extremely low on- AM01475v1 resistance, which is unmatched among silicon- based Power MOSFETs, making i

5.7. std8nm50n_stf8nm50n_stp8nm50n_stu8nm50n.pdf Size:1402K _st

STD8NM50N, STF8NM50N STP8NM50N, STU8NM50N N-channel 500 V, 0.73 ?, 5 A MDmesh™II Power MOSFET in DPAK, IPAK, TO-220 and TO-220FP Features Order codes VDSS@TJMAX RDS(on)max. ID 3 3 1 2 STD8NM50N 1 DPAK STF8NM50N IPAK 550 V < 0.79 ? 5 A STP8NM50N STU8NM50N ¦ 100% avalanche tested ¦ Low input capacitances and gate charge 3 3 2 2 1 1 ¦ Low gate input resistance TO-220 TO-220FP Application Switching applications Figure 1. Internal schematic diagram Description D(2) These devices are 500 V N-channel Power MOSFETs made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the G(1) world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. S(3) AM01475v1 Table 1. Device summary Order codes Marking Packages Packaging STD8NM50N DPAK Tape and reel STF8NM50N TO-220FP 8N

5.8. stp8nm60n_stf8nm60n_std8nm60n_stb8nm60n.pdf Size:700K _st

STx8NM60N N-channel 600 V, 0.56 ?,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features VDSS RDS(on) Type ID 3 (@Tjmax) max 2 1 3 2 STB8NM60N 650 V < 0.65 ? 7 A 1 IPAK STD8NM60N 650 V < 0.65 ? 7 A TO-220 3 STD8NM60N-1 650 V < 0.65 ? 7 A 1 STF8NM60N 650 V < 0.65 ? 7 A(1) D?PAK STP8NM60N 650 V < 0.65 ? 7 A 3 3 1 2 1. Limited only by maximum temperature allowed 1 DPAK TO-220FP ¦ 100% avalanche tested ¦ Low input capacitance and gate charge ¦ Low gate input resistance Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description G(1) This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to S(3) yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. AM01475v1 Table 1. Device summary Order c

See also transistors datasheet: STD6N10T4 , STD8N06-1 , STD8N06T4 , STD8N10 , STD8N10-1 , STD8N10L , STD8N10L-1 , STD8N10LT4 , IRF4905 , STE100N20 , STE150N10 , STE15N100 , STE16N100 , STE180N05 , STE180N10 , STE22N80 , STE24N90 .

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