STE36N50-DA MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STE36N50-DA

Type of STE36N50-DA transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 410

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 36

Maximum junction temperature (Tj), °C: 150

Rise Time of STE36N50-DA transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 8000

Maximum drain-source on-state resistance (Rds), Ohm: 0.14

Package: ISOTOP

Equivalent transistors for STE36N50-DA

STE36N50-DA PDF documents for downloads:

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See also transistors datasheet: STE180N10 , STE22N80 , STE24N90 , STE250N05 , STE250N06 , STE26N50 , STE26N90 , STE36N50 , BF960 , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , STE53NA50 .

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