MOSFET Datasheet


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STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB04N03J3
MTB04N03Q8 ..MTEF1P15Q8
MTEF1P15V8 ..MTP20N15E
MTP2301N3 ..NDT455N
NDT456P ..NTMS4816N
NTMS4873NF ..PHP3N50E
PHP3N60E ..PSMN030-150P
PSMN030-60YS ..RD45HMF1
RD60HUF1 ..RJK0365DPA
RJK0366DPA ..RQ1E075XN
RQ1E100XN ..SDF054JAB-D
SDF054JAB-S ..SFS9510
SFS9520 ..SMG2342NE
SMG2343 ..SML5085AN
SML5085BN ..SPD15P10PLG
SPD18P06PG ..SSG4542C
SSG4543C ..SSM3K16FU
SSM3K16FV ..SSP7480N
SSP7481P ..STB85NF3LL
STB85NF55 ..STD8N10L
STD8N10L-1 ..STH8NA60FI
STH90N15F4-2 ..STP16N65M5
STP16NF06 ..STP5NK52ZD
STP5NK60Z ..STU8N65M5
STU8NM50N ..TJ11A10M3
TJ120F06J3 ..TK8A55DA
TK8A60DA ..TPCA8055-H
TPCA8056-H ..UT12N10
UT136N03 ..WTD9973
WTG3043 ..ZXMP3A13F
ZXMP3A16DN8 ..ZXMS6006SG
 
STE53NA50 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

STE53NA50 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STE53NA50

Type of STE53NA50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 460

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 53

Maximum junction temperature (Tj), °C: 150

Rise Time of STE53NA50 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 12000

Maximum drain-source on-state resistance (Rds), Ohm: 0.085

Package: ISOTOP

Equivalent transistors for STE53NA50

STE53NA50 PDF doc:

1.1. ste53na50.pdf Size:280K _st

STE53NA50
STE53NA50
STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V < 0.085 ? 53 A TYPICAL R = 0.075 ? DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ISOTOP VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V V 500 V DGR Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC53 A ID Drain Current (continuous) at Tc = 100 oC33 A IDM(•) Drain Current (pulsed) 212 A P Total Dissipation at T = 25 oC 460 W tot c Derating Factor 3.68 W/oC o Tstg Storage Temperat

4.1. ste53nc50.pdf Size:278K _st

STE53NA50
STE53NA50
STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 53 A ID Drain Curren

See also transistors datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , IRFP260 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .

Keywords

 STE53NA50 Datasheet  STE53NA50 Datenblatt  STE53NA50 RoHS  STE53NA50 Distributor
 STE53NA50 Application Notes  STE53NA50 Component  STE53NA50 Circuit  STE53NA50 Schematic
 STE53NA50 Equivalent  STE53NA50 Cross Reference  STE53NA50 Data Sheet  STE53NA50 Fiche Technique

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