MOSFET Datasheet


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STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
 
 
List
10N30 ..2N5911
2N5912 ..2N6963
2N6964 ..2SJ128
2SJ130 ..2SJ553
2SJ553L ..2SK1519
2SK1520 ..2SK2157
2SK2158 ..2SK2751
2SK2753-01 ..2SK3136
2SK3140 ..2SK3664
2SK3666 ..2SK518
2SK519 ..3N50Z
3N60 ..5N65
5N65K ..AP10N70P-A
AP10N70R-A ..AP2R403AGMT-HF
AP2R403GMT-HF ..AP4533GEM-HF
AP4537GYT-HF ..AP92T03GP-HF
AP92T03GS-HF ..AP98T06GI-HF
AP98T06GP ..APT10088HVR
APT10M07JVR ..AUIRF2907Z
AUIRF2907ZS-7P ..AUIRLR2703
AUIRLR2905 ..BLD6G21L-50
BLD6G21LS-50 ..BS107PT
BS108 ..BSP322P
BSP603S2L ..BUK6228-55C
BUK6246-75C ..BUK7Y20-30B
BUK7Y25-40B ..BUZ326
BUZ32H ..CED04N7G
CED05N65 ..CEM9435A
CEM9436A ..CEU83A3
CEU83A3G ..DMP2004TK
DMP2004VK ..FCP9N60N
FCP9N60N ..FDC86244
FDD050N03B ..FDMA0104
FDMA1023PZ ..FDMS8026S
FDMS8027S ..FDPF39N20
FDPF39N20 ..FDS8928A
FDS8934A ..FQAF13N80
FQAF16N50 ..FQP6N80C
FQP6N90C ..FRL230R4
FRL234D ..GWM100-0085X1-SL
GWM100-0085X1-SL ..HAT1023R
HAT1024R ..HAT3018R
HAT3019R ..HUFA76413DK8T_F085
HUFA76419D3S ..IPB65R660CFD
IPB70N04S3-07 ..IPI04CN10NG
IPI052NE7N3G ..IPP50R520CP
IPP530N15N3G ..IRCZ345
IRCZ445 ..IRF543
IRF543FI ..IRF7314
IRF7314Q ..IRF8313
IRF831FI ..IRFBC40AS
IRFBC40L ..IRFIZ34A
IRFIZ34E ..IRFPC40
IRFPC48 ..IRFS4410
IRFS4410Z ..IRFU220
IRFU220A ..IRL3302
IRL3302S ..IRLR3915
IRLR6225 ..IXFC60N20
IXFC74N20P ..IXFK180N085
IXFK180N10 ..IXFN44N50
IXFN44N50Q ..IXFT52N50P2
IXFT58N20 ..IXTA110N055T7
IXTA120N04T2 ..IXTH1N250
IXTH200N075T ..IXTN22N100L
IXTN30N100L ..IXTQ26N60P
IXTQ26P20P ..IXTY48P05T
IXTY4N60P ..KHB8D8N25F2
KHB8D8N25P ..KP780V9
KP784A ..MTB35N06ZL
MTB50P03HDL ..NTB35N15
NTB45N06 ..NTP5404N
NTP5863N ..PHP69N03LT
PHP6N10E ..PSMN063-150D
PSMN069-100YS ..RF1K49221
RF1K49223 ..RJK0396DPA
RJK0397DPA ..RQJ0201UGDQA
RQJ0202VGDQA ..SDF11N90GAF
SDF120JAA-D ..SFS9Z24
SFS9Z34 ..SMG3401
SMG3402 ..SML50H19
SML50H24 ..SPI08N80C3
SPI11N60C3 ..SSG4910N
SSG4920N ..SSM3K320T
SSM3K329R ..SSQ5N50
SSQ6N60 ..STD10N10L-1
STD10N10LT4 ..STD95N4F3
STD95N4LF3 ..STI18NM60N
STI200N6F3 ..STP18N10
STP18N10FI ..STP60N55F3
STP60NF03L ..STV33N10
STV36N06 ..TJ80S04M3L
TJ8S06M3L ..TPC6001
TPC6003 ..TPCA8080
TPCA8081 ..UT2311
UT2312 ..WTL2602
WTL2622 ..ZXMP4A57E6
ZXMP6A13F ..ZXMS6006SG
 
STE53NA50 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

STE53NA50 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STE53NA50

Type of STE53NA50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 460

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 53

Maximum junction temperature (Tj), °C: 150

Rise Time of STE53NA50 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 12000

Maximum drain-source on-state resistance (Rds), Ohm: 0.085

Package: ISOTOP

Equivalent transistors for STE53NA50

STE53NA50 PDF doc:

1.1. ste53na50.pdf Size:280K _st

STE53NA50
STE53NA50
STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V < 0.085 ? 53 A TYPICAL R = 0.075 ? DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ISOTOP VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V V 500 V DGR Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC53 A ID Drain Current (continuous) at Tc = 100 oC33 A IDM(•) Drain Current (pulsed) 212 A P Total Dissipation at T = 25 oC 460 W tot c Derating Factor 3.68 W/oC o Tstg Storage Temperat

4.1. ste53nc50.pdf Size:278K _st

STE53NA50
STE53NA50
STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 53 A ID Drain Curren

See also transistors datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , IRFP260 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .

Keywords

 STE53NA50 Datasheet  STE53NA50 Datenblatt  STE53NA50 RoHS  STE53NA50 Distributor
 STE53NA50 Application Notes  STE53NA50 Component  STE53NA50 Circuit  STE53NA50 Schematic
 STE53NA50 Equivalent  STE53NA50 Cross Reference  STE53NA50 Data Sheet  STE53NA50 Fiche Technique

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