MOSFET Datasheet


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STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
  STE53NA50
 
STE53NA50
  STE53NA50
 
 
List
10N30 ..2N5949
2N5950 ..2N6965
2N6966 ..2SJ133
2SJ134 ..2SJ554
2SJ555 ..2SK1522
2SK1526 ..2SK216
2SK2161 ..2SK2771-01R
2SK2776 ..2SK3147L
2SK3147S ..2SK368
2SK3683-01MR ..2SK531
2SK532 ..3N65K
3N65Z ..6N10
6N40 ..AP1203AGMT-HF
AP1332GEU-HF ..AP30N30WI
AP30P10GH-HF ..AP4563GH-HF
AP4563GM ..AP92U03GMT-HF
AP92U03GP-HF ..AP9922GEO-HF
AP9923GEO-HF ..APT10M19SVR
APT10M25BVFR ..AUIRF3305
AUIRF3415 ..AUIRLR3410
AUIRLR3636 ..BLF147
BLF175 ..BS270
BS870 ..BSP92P
BSR315P ..BUK653R2-55C
BUK653R3-30C ..BUK9213-30A
BUK9214-30A ..BUZ50A
BUZ50A-220M ..CED20P06
CED20P10 ..CEP02N6G
CEP02N7G ..CPH3351
CPH3355 ..DMP2104V
DMP210DUDJ ..FCPF7N60NT
FCPF9N60NT ..FDD18N20LZ
FDD20AN06A0_F085 ..FDMA3023PZ
FDMA3028N ..FDMS86105
FDMS86200 ..FDPF5N60NZ
FDPF680N10T ..FDS8978
FDS8978 ..FQB25N33TM_F085
FQB27P06 ..FQP9N90C
FQP9P25 ..FRM130D
FRM130H ..GWM160-0055X1-SL
GWM160-0055X1-SMD ..HAT1047R
HAT1047RJ ..HEPF2007A
HIRF630 ..IPA057N08N3G
IPA075N15N3G ..IPB80N04S3-03
IPB80N04S3-04 ..IPI100P03P3L-04
IPI110N20N3G ..IPP60R250CP
IPP60R280C6 ..IRF1010Z
IRF1010ZL ..IRF610S
IRF611 ..IRF7328
IRF7329 ..IRF840S
IRF841 ..IRFBL12N50A
IRFD014 ..IRFL110
IRFL210 ..IRFPG30
IRFPG40 ..IRFS520
IRFS520A ..IRFU310
IRFU310A ..IRL3705ZL
IRL3705ZS ..IRLR8729
IRLR8743 ..IXFE48N50Q
IXFE48N50QD2 ..IXFK240N15T2
IXFK24N100 ..IXFN48N60P
IXFN50N50 ..IXFT70N20Q3
IXFT74N20 ..IXTA15P15T
IXTA160N04T2 ..IXTH220N075T
IXTH22N50P ..IXTN90P20P
IXTP01N100D ..IXTQ40N50Q
IXTQ42N25P ..IXTZ35N25MB
IXTZ42N20MA ..KMA2D7DP20X
KMA2D8P20X ..KTK5132S
KTK5132U ..NDB4060
NDB4060L ..NTD4855N
NTD4856N ..NTUD3127C
NTUD3169CZ ..PHX7N60E
PHX8N50E ..PSMN2R7-30PL
PSMN2R8-40PS ..RFD7N10LESM
RFD8P05 ..RJK1052DPB
RJK1053DPB ..RSD175N10
RSD200N05 ..SDF3N90
SDF40N50JAM ..SGSP321
SGSP322 ..SML1004RGN
SML1004RKN ..SMN03T80IS
SMN0470F ..SSD15N10
SSD20N06-90D ..SSM3J09FU
SSM3J108TU ..SSM6N04FU
SSM6N05FU ..STB14NM50N
STB150NF04 ..STD38NH02L
STD3LN62K3 ..STF35N65M5
STF3LN62K3 ..STL60N3LLH5
STL65DN3LLH5 ..STP38N06
STP3LN62K3 ..STP9NK70Z
STP9NK70ZFP ..STW45NM60D
STW47NM60ND ..TK3A60DA
TK3A65D ..TPC8109
TPC8110 ..TPCP8301
TPCP8302 ..WTN9575
WTN9973 ..ZXMP6A16K
ZXMP6A17DN8 ..ZXMS6006SG
 
STE53NA50 All MOSFET Data Sheet. Parameters and Characteristics. MOSFET Cross Reference Database.
 

STE53NA50 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STE53NA50

Type of STE53NA50 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 460

Maximum drain-source voltage |Uds|, V: 500

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 53

Maximum junction temperature (Tj), °C: 150

Rise Time of STE53NA50 transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 12000

Maximum drain-source on-state resistance (Rds), Ohm: 0.085

Package: ISOTOP

Equivalent transistors for STE53NA50

STE53NA50 PDF doc:

1.1. ste53na50.pdf Size:280K _st

STE53NA50
STE53NA50
STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V < 0.085 ? 53 A TYPICAL R = 0.075 ? DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ISOTOP VERY LOW INTERNAL PARASITIC INDUCTANCE ISOLATED PACKAGE UL RECOGNIZED INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SMPS & UPS MOTOR CONTROL WELDING EQUIPMENT OUTPUT STAGE FOR PWM, ULTRASONIC CIRCUITS ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V V 500 V DGR Drain- gate Voltage (RGS = 20 k?) VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC53 A ID Drain Current (continuous) at Tc = 100 oC33 A IDM(•) Drain Current (pulsed) 212 A P Total Dissipation at T = 25 oC 460 W tot c Derating Factor 3.68 W/oC o Tstg Storage Temperat

4.1. ste53nc50.pdf Size:278K _st

STE53NA50
STE53NA50
STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 53 A ID Drain Curren

See also transistors datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , IRFP260 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .

Keywords

 STE53NA50 Datasheet  STE53NA50 Datenblatt  STE53NA50 RoHS  STE53NA50 Distributor
 STE53NA50 Application Notes  STE53NA50 Component  STE53NA50 Circuit  STE53NA50 Schematic
 STE53NA50 Equivalent  STE53NA50 Cross Reference  STE53NA50 Data Sheet  STE53NA50 Fiche Technique

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