All MOSFET. STE53NA50 Datasheet

 

STE53NA50 MOSFET. Datasheet pdf. Equivalent

Type Designator: STE53NA50

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 460 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 53 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 12000 pF

Maximum Drain-Source On-State Resistance (Rds): 0.085 Ohm

Package: ISOTOP

STE53NA50 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STE53NA50 PDF doc:

1.1. ste53na50.pdf Size:280K _st

STE53NA50
STE53NA50

STE53NA50 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STE53NA50 500 V < 0.085 ? 53 A TYPICAL R = 0.075 ? DS(on) HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY VERY LARGE SOA - LARGE PEAK POWER CAPABILITY EASY TO MOUNT SAME CURRENT CAPABILITY FOR THE TWO SOURCE TERMINALS EXTREMELY LOW Rth (Junction to case) ISOTOP VERY LOW INTERNAL PARA

4.1. ste53nc50.pdf Size:278K _st

STE53NA50
STE53NA50

STE53NC50 N-CHANNEL 500V - 0.070? - 53A ISOTOP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STE53NC50 500V < 0.08? 53 A TYPICAL RDS(on) = 0.07 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED ISOTOP DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatl

Datasheet: STE36N50-DA , STE36N50-DK , STE38N60 , STE38NA50 , STE40N55 , STE45N50 , STE47N50 , STE50N40 , IRFP260 , STE90N25 , STH10NA50 , STH10NA50FI , STH12N60 , STH12N60FI , STH12NA60 , STH12NA60FI , STH14N50 .

 


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