STK12N06L MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STK12N06L

Type of STK12N06L transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 50

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 12

Maximum junction temperature (Tj), °C: 150

Rise Time of STK12N06L transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.15

Package: SOT82

Equivalent transistors for STK12N06L

STK12N06L PDF documents for downloads:

3.1. stk12n05l.pdf Size:180K _st

STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STK12N05L 50 V < 0.15 ? 12 A STK12N06L 60 V < 0.15 ? 12 A TYPICAL RDS(on) = 0.115 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED 3 REPETITIVE AVALANCHE DATA AT 100oC 2 1 3 LOW GATE CHARGE 2 1 LOGIC LEVEL COMPATIBLE INPUT 175oC OPERATING TEMPERATURE FOR STANDARD PACKAGE SOT-82 SOT-194 APPLICATION ORIENTED (option) CHARACTERIZATION APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS INTERNAL SCHEMATIC DIAGRAM REGULATORS DC-DC & DC-AC CONVERTERS MOTOR CONTROL, AUDIO AMPLIFIERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STK12N05L STK12N06L V Drain-source Voltage (V = 0) 50 60 V DS GS VDG R Drain- gate Voltage (RGS = 20 k?)50 V 60 V Gate-source Voltage ± 15 V GS o I Drain Current (continuous) at T = 25 C12 A D c o ID Dr

See also transistors datasheet: STH9N80 , STH9N80FI , STH9NA60 , STHV102 , STHV102FI , STHV82 , STHV82FI , STK12N05L , 40673 , STK14N05 , STK14N06 , STK14N10 , STK16N10L , STK17N10 , STK18N05 , STK18N05L , STK18N06 .

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