STP3N80XI MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STP3N80XI

Type of STP3N80XI transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 28

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 1.7

Maximum junction temperature (Tj), °C: 150

Rise Time of STP3N80XI transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 4.5

Package: ISOWATT221

Equivalent transistors for STP3N80XI

STP3N80XI PDF documents for downloads:

3.1. stp3n80.pdf Size:113K _st

STP3NB80 STP3NB80FP ? N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A(uu) TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol P

5.1. stp3nb60.pdf Size:352K _st

STP3NB60 STP3NB60FP N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB60 600 V <3.6 ? 3.3 A STP3NB60FP 600 V < 3.6 ? 2.2 A TYPICAL R = 3.3 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, SGS-Thomson has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value U

5.2. stp3nb90.pdf Size:383K _st

STP3NB90 STP3NB90FP N-CHANNEL 900V - 4 ? - 3.5 A TO-220/TO-220FP PowerMesh™ MOSFET TYPE VDSS RDS(on) ID Pw STP3NB90 900 V <4.2? 3.5 A 110 W STP3NB90FP 900 V <4.2? 3.5 A 35 W TYPICAL RDS(on) = 4 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 2 2 1 1 GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES TO-220FP TO-220 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ORDERING INFOR

5.3. stp3na90-.pdf Size:59K _st

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V R I DSS DS(o n) D STP3NA90 900 V < 5.3 ? 3 A STP3NA90FI 900 V < 5.3 ? 1.9 A TYPICAL R = 4.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA90 STP3NA90FI V Drain-Source Voltage (V = 0) 900 V DS gs VDGR Drain-Gate Voltage (Rgs = 20 K?) 900 V VGS Gate-Source Voltage ± 30 V I Drain-Current (continuous) at T = 25oC3 1.9 A D c I Drain-Current (continuous) at T = 100oC21.2 A D c I (•) Drain-Current (Pulsed) 12 12 A DM Ptot Total

5.4. stp3na100.pdf Size:365K _st

STP3NA100 STP3NA100FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA100 1000 V <5 ? 3.5 A STP3NA100FI 1000 V < 5 ? 2 A TYPICAL R = 4.3 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 GATE CHARGE MINIMIZED 2 2 REDUCED THRESHOLD VOLTAGE SPREAD 1 1 TO-220 TO-220FI APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA100 STP3NA100FI VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltage (RGS = 20 k?) 1000 V VGS Gate-source Voltage ± 30 V ID Drain Current (continuous) at Tc = 25 oC 3.5 2.0 A I Drain Current (continuous) at T = 100 oC 2.0 1.2 A D c IDM(•) Drain Current (pulsed) 14 14 A P Total Dissipation at T = 2

5.5. stp3na80.pdf Size:383K _st

STP3NA80 STP3NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA80 800 V < 4.5 ? 3.1 A STP3NA80FI 800 V < 4.5 ? 2 A TYPICAL R = 3.5 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA80 STP5NA80FI VDS Drain-sou

5.6. stp3na50.pdf Size:397K _st

STP3NA50 STP3NA50FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA50 500 V < 3 ? 3.3 A STP3NA50FI 500 V < 3 ? 2.3 A TYPICAL R = 2.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA50 STP3NA50FI VDS Drain-so

5.7. stfw3n150_stp3n150_stw3n150.pdf Size:759K _st

STFW3N150 STP3N150, STW3N150 N-channel 1500 V, 6 ?, 2.5 A, PowerMESH™ Power MOSFET in TO-220, TO-247, TO-3PF Features RDS(on) Type VDSS ID PTOT max. STFW3N150 1500 V < 9 ? 2.5 A 63 W 3 2 1 STP3N150 1500 V < 9 ? 2.5 A 140 W TO-220 STW3N150 1500 V < 9 ? 2.5 A 140 W ¦ 100% avalanche tested ¦ Intrinsic capacitances and Qg minimized 3 3 2 ¦ High speed switching 2 1 1 TO-247 ¦ Fully isolated TO-3PF plastic package TO-3PF ¦ Creepage distance path is 5.4 mm (typ.) for TO-3PF Figure 1. Internal schematic diagram Application D(2) Switching applications Description Using the well consolidated high voltage MESH G(1) OVERLAYTM process, STMicroelectronics has designed an advanced family of very high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the S(3) company’s proprietary edge termination structure, gives the lowest RDS(on) per area, unrivalled gate charge and switching characteristics. AM01475v1 Tabl

5.8. stb3n62k3_std3n62k3_stf3n62k3_stp3n62k3_stu3n62k3.pdf Size:548K _st

STB3N62K3, STD3N62K3, STF3N62K3 STP3N62K3, STU3N62K3 N-channel 620 V, 2.2 ? , 2.7 A SuperMESH3™ Power MOSFET D2PAK, DPAK, TO-220FP, TO-220, IPAK Features RDS(on) 3 3 Type VDSS ID PD 2 1 max 1 DPAK STB3N62K3 620 V < 2.5 ? 2.7 A 45 W IPAK STD3N62K3 620 V < 2.5 ? 2.7 A 45 W STF3N62K3 620 V < 2.5 ? 2.7 A(1) 20 W 3 1 STP3N62K3 620 V < 2.5 ? 2.7 A 45 W D?PAK STU3N62K3 620 V < 2.5 ? 2.7 A 45 W 1. Limited by package 3 3 2 2 1 1 ¦ 100% avalanche tested TO-220 TO-220FP ¦ Extremely high dv/dt capability ¦ Very low intrinsic capacitances ¦ Improved diode reverse recovery Figure 1. Internal schematic diagram characteristics ¦ Zener-protected Application ¦ Switching applications Description The new SuperMESH3™ series is obtained through the combination of a further fine tuning of ST's well established strip-based PowerMESH™ layout with a new optimization of the vertical structure. In addition to reducing on-resistance significantly versus previous gen

5.9. stp3na60.pdf Size:436K _st

STP3NA60 STP3NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3NA60 600 V < 4 ? 2.9 A STP3NA60FI 600 V < 4 ? 2.1 A TYPICAL R = 3.3 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low R and gate charge, unequalled DS(on) INTERNAL SCHEMATIC DIAGRAM ruggedness and superior switching performance. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA60 STP3NA60FI VDS Drain-so

5.10. stp3nc70z.pdf Size:324K _st

STP3NC70Z STP3NC70ZFP N-CHANNEL 700V - 4.1? - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP3NC70Z 700V < 4.7? 2.5 A STP3NC70ZFP 700V < 4.7? 2.5 A TYPICAL RDS(on) = 4.1? EXTREMELY HIGH dv/dt AND CAPABILITY GATE TO - SOURCE ZENER DIODES 3 100% AVALANCHE TESTED 2 1 VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsur- passed on-resistance per unit area while integrat- ing back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capa- bility with higher ruggedness performance as re- quested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NC70Z STP3NC70ZFP VDS Drain-source Voltage (VGS = 0) 700 V VDGR Drain-gate Volt

5.11. stp3nb80-fp.pdf Size:353K _st

STP3NB80 STP3NB80FP ® N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol P

5.12. stp3nc90z.pdf Size:335K _st

STP3NC90Z - STP3NC90ZFP STB3NC90Z-1 N-CHANNEL 900V - 3.2? - 3.5A TO-220/TO-220FP/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE VDSS RDS(on) ID STP3NC90Z/FP 900V < 3.5? 3.5 A STB3NC90Z-1 900V < 3.5? 3.5 A TYPICAL RDS(on) = 3.2? 3 2 EXTREMELY HIGH dv/dt AND CAPABILITY GATE 1 TO - SOURCE ZENER DIODES TO-220 TO-220FP 100% AVALANCHE TESTED VERY LOW GATE INPUT RESISTANCE GATE CHARGE MINIMIZED 3 2 1 I2PAK DESCRIPTION (Tabless TO-220) The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to- back Zener diodes between gate and source. Such ar- rangement gives extra ESD capability with higher rug- gedness performance as requested by a large variety of single-switch applications. APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP(B)3NC90Z(-1) STP3NC90ZFP VDS

5.13. stp3nk60z-fp_stb3nk60z_std3nk60z_std3nk60z-1.pdf Size:757K _st

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3? - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 ? 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 ? 2.4 A 20 W STB3NK60Z 600 V < 3.6 ? 2.4 A 45 W STD3NK60Z 600 V < 3.6 ? 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 ? 2.4 A 45 W 2 1 TYPICAL RDS(on) = 3.3 ? TO-220 TO-220FP 3 1 EXTREMELY HIGH dv/dt CAPABILITY D2PAK 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES 3 2 1 1 VERY GOOD MANUFACTURING IPAK DPAK REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFET

5.14. stp3nk90z_stp3nk90zfp_std3nk90z_std3nk90z-1.pdf Size:613K _st

STP3NK90Z - STP3NK90ZFP STD3NK90Z - STD3NK90Z-1 N-CHANNEL 900V - 4.1? - 3A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK90Z 900 V < 4.8 ? 3 A 90 W STP3NK90ZFP 900 V < 4.8 ? 3 A 25 W STD3NK90Z 900 V < 4.8 ? 3 A 90 W STD3NK90Z-1 900 V < 4.8 ? 3 A 90 W 3 TYPICAL RDS(on) = 4.1 ? 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-220 TO-220FP 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES 3 VERY GOOD MANUFACTURING 3 2 1 REPEATIBILITY 1 IPAK DPAK DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- INTERNAL SCHEMATIC DIAGRAM based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products. APPLICATIONS HIGH

5.15. stp3nc60(fp).pdf Size:343K _st

STP3NC60 STP3NC60FP N-CHANNEL 600V - 3.3? - 3A TO-220/TO-220FP PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP3NC60 600 V < 3.6 ? 3 A STP3NC60FP 600V < 3.6 ? 3 A TYPICAL RDS(on) = 3.3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 2 2 NEW HIGH VOLTAGE BENCHMARK 1 1 GATE CHARGE MINIMIZED TO-220FP TO-220 DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area INTERNAL SCHEMATIC DIAGRAM figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NC60 STP3NC60FP VDS Drain-source Voltage (VGS = 0) 600 V VDGR Drain-gate Voltage (RGS =20k?) 600 V VGS Gate-

5.16. stf3nk100z_stp3nk100z_std3nk100z.pdf Size:424K _st

STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4? - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) VDSS ID PTOT Type Max STF3NK100Z 1000V < 6? 2.5A 25W 3 3 2 2 1 1 STP3NK100Z 1000V < 6? 2.5A 90W TO-220 TO-220FP STD3NK100Z 1000V < 6? 2.5A 90W ¦ Extremely high dv/dt capability 3 1 ¦ 100% avalanche tested DPAK ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeatability Figure 1. Internal schematic diagram Application ¦ Switching applications Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, specialties is taken to ensure a very good dv/dt capability for the most demanding application. Such series complements ST full range of high voltage Power MOSFETs. Table 1. Device summary Order codes Marking Package Packaging S

5.17. stp3nb80.pdf Size:346K _st

STP3NB80 STP3NB80FP ® N - CHANNEL 800V - 4.6? - 2.6A - TO-220/TO-220FP PowerMESH? MOSFET TYPE VDSS RDS(on) ID STP3NB80 800 V < 6.5 ? 2.6 A STP3NB80FP 800 V < 6.5 ? 2.6 A TYPICAL R = 4.6 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 3 2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY? process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY(UPS) DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT ABSOLUTE MAXIMUM RATINGS Symbol P

5.18. stp3na90.pdf Size:111K _st

STP3NA90 STP3NA90FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NA90 900 V < 5.3 ? 3 A STP3NA90FI 900 V < 5.3 ? 1.9 A TYPICAL R = 4.4 ? DS(on) ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NA90 STP3NA90FI VDS Drain-Source Voltage (Vgs = 0) 900 V VDGR Drain-Gate Voltage (Rgs = 20 K?) 900 V VGS Gate-Source Voltage ± 30 V I Drain-Current (continuous) at T = 25oC3 1.9 A D c I Drain-Current (continuous) at T = 100oC21.2 A D c IDM(•) Drain-Current (Pulsed) 12 12 A Ptot Total Dissipa

5.19. stp3nc50.pdf Size:238K _st

STP3NC50 N-CHANNEL 500V - 3? - 2.8A TO-220 PowerMesh™II MOSFET TYPE VDSS RDS(on) ID STP3NC50 500 V < 4 ? 2.8 A TYPICAL RDS(on) = 3 ? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 The PowerMESH™II is the evolution of the first TO-220 generation of MESH OVERLAY™. The layout re- finements introduced greatly improve the Ron*area figure of merit while keeping the device at the lead- ing edge for what concerns swithing speed, gate INTERNAL SCHEMATIC DIAGRAM charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 500 V VDGR Drain-gate Voltage (RGS = 20 k?) 500 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 2.8 A ID Drain Curr

5.20. stp3nb100.pdf Size:150K _st

STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3? - 3A TO-220/TO-220FP PowerMesh™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STP3NB100 1000 V < 6 ? 3 A STP3NB100FP 1000 V < 6 ? 3 A TYPICAL RDS(on) = 5.3? EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 3 VERY LOW INTRINSIC CAPACITANCES 2 2 1 1 GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- INTERNAL SCHEMATIC DIAGRAM nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITH MODE POWER SUPPLIES (SMPS) DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3NB1

5.21. stp3n100.pdf Size:366K _st

STP3N100 STP3N100FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP3N100 1000 V < 5 ? 3.5 A STP3N100FI 1000 V < 5 ? 2 A AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INPUT CAPACITANCE 3 3 LOW GATE CHARGE 2 2 1 1 APPLICATION ORIENTED CHARACTERIZATION TO-220 ISOWATT220 APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SWITCH MODE POWER SUPPLIES (SMPS) CONSUMER AND INDUSTRIAL LIGHTING DC-AC INVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE INTERNAL SCHEMATIC DIAGRAM POWER SUPPLY (UPS) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit STP3N100 STP3N100FI VDS Drain-source Voltage (VGS = 0) 1000 V VDGR Drain- gate Voltage (RGS = 20 k?)1000 V VGS Gate-source Voltage ± 20 V ID Drain Current (continuous) at Tc = 25 oC3.5 2 A ID Drain Current (continuous) at Tc = 100 oC2 1.2 A IDM(•) Drain Current (pulsed) 14 14 A Ptot Total Dissipation at Tc = 25 oC100 W 40 Derating Factor

5.22. std3nk80z_std3nk80z-1_stf3nk80z_stp3nk80z.pdf Size:882K _st

STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 ?, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP3NK80Z 800 V < 4.5 ? 2.5 A 3 2 1 STF3NK80Z 800 V < 4.5 ? 2.5 A TO-220FP TO-220 STD3NK80Z 800 V < 4.5 ? 2.5 A STD3NK80Z-1 800 V < 4.5 ? 2.5 A ¦ Extremely high dv/dt capability 3 3 2 1 ¦ 100% avalanche tested 1 DPAK IPAK ¦ Gate charge minimized ¦ Very low intrinsic capacitances ¦ Very good manufacturing repeatability Figure 1. Internal schematic diagram Application D(2) ¦ Switching applications Description G(1) The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high S(3) voltage MOSFETs includi

5.23. stp3nk60z.pdf Size:755K _st

STP3NK60Z - STP3NK60ZFP STB3NK60Z-STD3NK60Z-STD3NK60Z-1 N-CHANNEL 600V - 3.3? - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP3NK60Z 600 V < 3.6 ? 2.4 A 45 W STP3NK60ZFP 600 V < 3.6 ? 2.4 A 20 W STB3NK60Z 600 V < 3.6 ? 2.4 A 45 W STD3NK60Z 600 V < 3.6 ? 2.4 A 45 W 3 STD3NK60Z-1 600 V < 3.6 ? 2.4 A 45 W 2 1 TYPICAL RDS(on) = 3.3 ? TO-220 TO-220FP 3 1 EXTREMELY HIGH dv/dt CAPABILITY D2PAK 100% AVALANCHE TESTED GATE CHARGE MINIMIZED 3 VERY LOW INTRINSIC CAPACITANCES 3 2 1 1 VERY GOOD MANUFACTURING IPAK DPAK REPEATIBILITY DESCRIPTION The SuperMESH™ series is obtained through an INTERNAL SCHEMATIC DIAGRAM extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFET

See also transistors datasheet: STP36N06LFI , STP38N06 , STP3N100 , STP3N100FI , STP3N100XI , STP3N50XI , STP3N60FI , STP3N60XI , IRLML2502 , STP3N90 , STP3N90FI , STP3NA50FI , STP3NA80 , STP3NA80FI , STP40N05 , STP40N05FI , STP40N10 .

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