STV5NA80 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STV5NA80

Type of STV5NA80 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 125

Maximum drain-source voltage |Uds|, V: 800V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 4.7

Maximum junction temperature (Tj), °C: 150

Rise Time of STV5NA80 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 2.4

Package: PowerSO10

Equivalent transistors for STV5NA80

STV5NA80 PDF documents for downloads:

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See also transistors datasheet: STV4N100 , STV4NA60 , STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , IRLML2502 , STV60N03L-12 , STV60N05 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 .

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