STV60N05 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: STV60N05

Type of STV60N05 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 150

Maximum drain-source voltage |Uds|, V: 50V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 60

Maximum junction temperature (Tj), °C: 150

Rise Time of STV60N05 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.02

Package: PowerSO10

Equivalent transistors for STV60N05

STV60N05 PDF documents for downloads:

4.1. stv60ne06-16.pdf Size:123K _st2

STV60NE06-16 ® N - CHANNEL 60V - 0.013? - 60A PowerSO-10 STripFET? POWER MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STV60NE06-16 60 V < 0.016 ? 60 A TYPICAL R = 0.013 ? DS(on) EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC 10 APPLICATION ORIENTED CHARACTERIZATION 1 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature PowerSO-10 Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing INTERNAL SCHEMATIC DIAGRAM reproducibility. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING SOLENOID AND RELAY DRIVERS MOTOR CONTROL, AUDIO AMPLIFIERS DC-DC & DC-AC CONVERTERS AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. ) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDS Drain-source Voltage (VG

See also transistors datasheet: STV4NA80 , STV50N05 , STV50N06 , STV55N05L , STV55N06L , STV5NA50 , STV5NA80 , STV60N03L-12 , 3SK73 , STV60N05-16 , STV60N06 , STV6NA60 , STV7NA40 , STV7NA60 , STV8NA50 , STW12N60 , STW12NA50 .

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