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FDA59N25 MOSFET (IC) Datasheet. Cross Reference Search. FDA59N25 Equivalent

Type Designator: FDA59N25

Type of FDA59N25 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 392

Maximum drain-source voltage |Uds|, V: 250

Maximum gate-source voltage |Ugs|, V: 30

Maximum drain current |Id|, A: 59

Maximum junction temperature (Tj), °C: 150

Rise Time of FDA59N25 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.049

Package: TO3PN

FDA59N25 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FDA59N25 PDF doc:

1.1. fda59n25.pdf Size:643K _fairchild_semi

FDA59N25
FDA59N25

September 2005 TM UniFET FDA59N25 VDS = 250V VDS(Avalanche) = 300V 250V N-Channel MOSFET RDS(on) Typ. @10V = 41m? Features Description • 59A, 250V, RDS(on) = 0.049? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge (typical 63 nC) DMOS technology. • Low Crss (typical 70 pF) This

4.1. fda59n30.pdf Size:427K _fairchild_semi

FDA59N25
FDA59N25

TM UniFET FDA59N30 300V N-Channel MOSFET Features Description • 59A, 300V, RDS(on) = 0.056? @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( typical 77 nC) DMOS technology. • Low Crss ( typical 80 pF) This advanced technology has been especially tailored to mini- • Fast switching

See also transistors datasheet: STU402D , FDA24N50 , FDA24N50F , FDA28N50 , FDA28N50F , FDA33N25 , FDA38N30 , FDA50N50 , 2SK2837 , FDA59N30 , FDA69N25 , FDA70N20 , STU404D , FDA8440 , FDB016N04AL7 , FDB024N04AL7 , FDB024N06 .

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 FDA59N25 - Design, Power, MOSFET, stock, cross reference, data, equipment, RoHS Compliant, Service, IC, Database equivalence, Semiconductor, genuine, price, repair, replacement, replacement part, substitute, replacement type, Innovation, supply

 


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