FDD5810_F085 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDD5810_F085

Type of FDD5810_F085 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 60V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 35.0

Maximum junction temperature (Tj), °C:

Rise Time of FDD5810_F085 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.022

Package: TO252(DPAK)

Equivalent transistors for FDD5810_F085

FDD5810_F085 PDF documents for downloads:

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See also transistors datasheet: FDD4243 , FDD4243_F085 , FDD4685 , FDD4685_F085 , FDD5353 , FDD5612 , FDD5614P , FDD5670 , 3SK74 , FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A .

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