FDD6630A MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDD6630A

Type of FDD6630A transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 21.0

Maximum junction temperature (Tj), °C:

Rise Time of FDD6630A transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.035

Package: TO252(DPAK)

Equivalent transistors for FDD6630A

FDD6630A PDF documents for downloads:

1.1. fdd6630a.pdf Size:68K _fairchild_semi

April 2001 FDD6630A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed • 21 A, 30 V R = 35 m? @ V = 10 V DS(ON) GS specifically to improve the overall efficiency of DC/DC R = 50 m? @ V = 4.5 V DS(ON) GS converters using either synchronous or conventional switching PWM controllers. It has been optimized for • Low gate charge (5nC typical) low gate charge, low RDS( ON) and fast switching speed. • Fast switching Applications • High performance trench technology for extremely • DC/DC converter low R DS(ON) • Motor drives . D D G G S TO-252 S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units V Drain-Source Voltage 30 V DSS V Gate-Source Voltage ±20 V GSS I Drain Current – Continuous (Note 3) 21 A D – Pulsed (Note 1a) 100 P W D Power Dissipation (Note 1) 28 (Note 1a) 3.2 (Note 1b) 1.3 T , T Operating and Storage Junction Tempera

4.1. fdd6635.pdf Size:199K _fairchild_semi

February 2007 tm FDD6635 35V N-Channel PowerTrench® MOSFET General Description Features This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench • 59 A, 35 V RDS(ON) = 10 m? @ VGS = 10 V technology to deliver low Rdson and optimized Bvdss RDS(ON) = 13 m? @ VGS = 4.5 V capability to offer superior performance benefit in the • Fast Switching applications. • RoHS compliant Applications • Inverter • Power Supplies D D G G S D-PAK TO-252 (TO-252) S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage 35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) 40 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current @TC=25°C (Note 3) 59 A @TA=25°C (Note 1a) 15 Pulsed (Note 1a) 100 EAS Single Pulse Avalanche Energy (Note 5) 113 mJ PD Power Dissipation @TC=25°C (Note 3) 55 W @TA=25°C (Note 1a) 3.8 @TA=25°C (Note 1b) 1.6

4.2. fdd6637.pdf Size:121K _fairchild_semi

August 2006 FDD6637 35V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET has been produced using • –55 A, –35 V RDS(ON) = 11.6 m? @ VGS = –10 V Fairchild Semiconductor’s proprietary PowerTrench RDS(ON) = 18 m? @ VGS = –4.5 V technology to deliver low Rdson and optimized Bvdss • High performance trench technology for extremely capability to offer superior performance benefit in the low RDS(ON) applications. • RoHS Compliant Applications • Inverter • Power Supplies D D G G S D-PAK TO-252 S (TO-252) Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –35 V VDS(Avalanche) Drain-Source Avalanche Voltage (maximum) (Note 4) –40 V VGSS Gate-Source Voltage V ±25 ID A Continuous Drain Current @TC=25°C (Note 3) –55 @TA=25°C (Note 1a) –13 Pulsed (Note 1a) –100 PD W Power Dissipation @TC=25°C (Note 3) 57 @TA=25°C (Note 1a) 3.1 @TA=25°C (No

See also transistors datasheet: FDD5N50 , FDD5N50F , FDD5N50NZ , FDD5N50NZF , FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , BUZ90 , FDD6635 , FDD6637 , FDD6637_F085 , FDD6680AS , FDD6680AS , FDD6685 , FDD6760A , FDD6770A .

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