FDD6680AS MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDD6680AS

Type of FDD6680AS transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 55.0

Maximum junction temperature (Tj), °C:

Rise Time of FDD6680AS transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0105

Package: TO252(DPAK)

Equivalent transistors for FDD6680AS

FDD6680AS PDF documents for downloads:

1.1. fdd6680as.pdf Size:327K _fairchild_semi

April 2008 FDD6680AS tm 30V N-Channel PowerTrench® SyncFET™ General Description Features The FDD6680AS is designed to replace a single • 55 A, 30 V RDS(ON) max= 10.5 m? @ VGS = 10 V MOSFET and Schottky diode in synchronous DC:DC RDS(ON) max= 13.0 m? @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low • Includes SyncFET Schottky body diode RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of • Low gate charge (21nC typical) the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the • High performance trench technology for extremely performance of the FDD6680A in parallel with a low RDS(ON) Schottky diode. • High power and current handling capability Applications • DC/DC converter . • Low side notebook D D G G S TO-252 S Absolute Maximum Rating

2.1. fdd6680a.pdf Size:200K _fairchild_semi

February 2000 FDD6680A ? ? ? ? N-Channel, Logic Level, PowerTrench? MOSFET Features General Description This N-Channel Logic level MOSFET is produced using • 56 A, 30 V. RDS(ON) = 0.0095 ? @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 ? @ VGS = 4.5 V. that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior • Low gate charge ( 23nC typical ). switching performance. • Fast switching speed. Applications • High performance trench technology for extremely low RDS(ON). • DC/DC converter • Motor drives D D G G S S TO-252 Absolute Maximum Ratings T =25oC unless otherwise noted A Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximum Drain Current - Continuous (Note 1) 56 A (Note 1a) 14 Maximum Drain Current - Pulsed 100 PD Maximum Power Dissipation @ TC = 25oC (Note 1) 60 W TA = 25oC (Note 1a) 2.8 TA = 25oC

3.1. fdd6680.pdf Size:199K _fairchild_semi

July 1999 FDD6680 N-Channel Logic Level PWM Optimized PowerTrench™ MOSFET Features General Description This N-Channel Logic level MOSFET has been designed • 55 A, 30 V. RDS(on) = 0.010 ? @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(on) = 0.015 ? @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. • Optimized for use in high frequency DC/DC converters. The MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS(on) • Low gate charge (19nC typical). specifications. The result is a MOSFET that is easier to drive, even at very high frequencies, and DC/DC power • Very Fast switching. supply designs with higher overall efficiency. Applications • DC/DC converter • Motor drives D D G G S S TO-252 Absolute Maximum Ratings T =25oC unless otherwise noted C Symbol Parameter Ratings Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V ID Maximu

See also transistors datasheet: FDD5N50U , FDD5N53 , FDD6530A , FDD6630A , FDD6630A , FDD6635 , FDD6637 , FDD6637_F085 , IRF740 , FDD6680AS , FDD6685 , FDD6760A , FDD6770A , FDD6778A , FDD6780A , FDD6796A , FDD6N20TM .

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