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STT01N20 MOSFET. Datasheet pdf. Equivalent

Type Designator: STT01N20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 3 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 1 A

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: SOT223

STT01N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STT01N20 PDF doc:

5.1. stt01l07.pdf Size:133K _samhop

STT01N20
STT01N20

Green Product STT01L07 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (mΩ) Max VDSS ID Rugged and reliable. 526 @ VGS=10V Surface Mount Package. 70V 1.5A 617 @ VGS=4.5V ESD Protected. D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIM

5.2. stt01l10.pdf Size:126K _samhop

STT01N20
STT01N20

Green Product STT01L10 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (mΩ) Max Rugged and reliable. 310 @ VGS=10V Surface Mount Package. 100V 1.5A 350 @ VGS=4.5V D G G S STT SERIES S SOT - 223 ABSOLUTE MAXIMUM RATINGS (TA=2

Datasheet: FDD8447L , FDD8447L_F085 , FDD8451 , FDD8453LZ , FDD8453LZ_F085 , FDD850N10L , STT02N07 , FDD86102 , BUZ90 , FDD86102LZ , STT01L10 , FDD86250 , FDD86326 , FDD8647L , FDD8770 , FDD8778 , FDD8780 .

 


STT01N20
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