FDD8778 MOSFET. Datasheet pdf. Equivalent
Type Designator: FDD8778
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 39 W
Maximum Drain-Source Voltage |Vds|: 25 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 12.6 nC
Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm
Package: TO252 DPAK
FDD8778 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDD8778 Datasheet (PDF)
fdd8778 fdu8778.pdf
May 2006FDD8778/FDU8778tmN-Channel PowerTrench MOSFET 25V, 35A, 14mFeatures General Description Max rDS(on) = 14.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 21.0m at VGS = 4.5V, ID = 33A either synchronous or conventional switching PWMcontrollers. It has
fdd8770 fdu8770.pdf
March 2006FDD8770/FDU8770N-Channel PowerTrench MOSFET 25V, 35A, 4.0mGeneral Description Features Max rDS(on) = 4.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 5.5m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has bee
fdd8796 fdu8796.pdf
March 2006FDD8796/FDU8796N-Channel PowerTrench MOSFET 25V, 35A, 5.7mGeneral Description Features Max rDS(on) = 5.7m at VGS = 10V, ID = 35A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 8.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
fdd8782 fdu8782.pdf
November 2009FDD8782/FDU8782N-Channel PowerTrench MOSFET 25V, 35A, 11mGeneral Description Features Max rDS(on) = 11.0m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 14.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
fdd8780 fdu8780.pdf
March 2006FDD8780/FDU8780N-Channel PowerTrench MOSFET 25V, 35A, 8.5mGeneral Description Features Max rDS(on) = 8.5m at VGS = 10V, ID = 35AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using Max rDS(on) = 12.0m at VGS = 4.5V, ID = 35A either synchronous or conventional switching PWMcontrollers. It has be
fdd8750.pdf
December 2006FDD8750tmN-Channel PowerTrench MOSFET 25V, 2.7A, 40mFeatures General Description Max rDS(on) = 40m at VGS = 10V, ID = 2.7AThis N-Channel MOSFET has been designed specifically to improve the overall effciency of DC/DC converters using either Max rDS(on) = 60m at VGS = 4.5V, ID = 2.7Asynchronous or conventional switching PWM controllers.It has Low g
fdd8782.pdf
FDD8782www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOLU
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