FDD8896_F085 MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDD8896_F085

Type of FDD8896_F085 transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 94.0

Maximum junction temperature (Tj), °C:

Rise Time of FDD8896_F085 transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0057

Package: TO252(DPAK)

Equivalent transistors for FDD8896_F085

FDD8896_F085 PDF documents for downloads:

1.1. fdd8896_fdu8896.pdf Size:567K _fairchild_semi

April 2008 FDD8896 / FDU8896 tm N-Channel PowerTrench® MOSFET 30V, 94A, 5.7m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 5.7m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 6.8m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G D S (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 94 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 85 A Continuous (Tamb = 25oC, VGS = 10V,

5.1. fdd8880.pdf Size:498K _fairchild_semi

N April 2008 FDD8880 tm N-Channel PowerTrench® MOSFET 30V, 58A, 9m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 9m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 12m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant D D G G S D-PAK TO-252 S (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 58 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 51 A Continuous (Tamb = 25oC, VGS = 10V, with R?JA = 52oC/

5.2. fdd8882_fdu8882.pdf Size:429K _fairchild_semi

2 April 2008 FDD8882 / FDU8882 tm N-Channel PowerTrench® MOSFET 30V, 55A, 11.5m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 11.5m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using rDS(ON) = 15m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) Low gate charge High power and current handling capability RoHS Complicant Application DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G D S (TO-252) www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation 1 FDD8882/FDU8882 Rev. C FDD8882 / FDU8882 N-Channel PowerTrench® MOSFET Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Volt

5.3. fdd8874_fdu8874.pdf Size:659K _fairchild_semi

o April 2008 FDD8874 / FDU8874 tm N-Channel PowerTrench® MOSFET 30V, 116A, 5.1m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 5.1m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 6.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G D S (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 116 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 103 A Continuous

5.4. fdd8876_fdu8876.pdf Size:468K _fairchild_semi

N April 2008 FDD8876 / FDU8876 tm N-Channel PowerTrench® MOSFET 30V, 73A, 8.2m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 8.2m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 10m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters • RoHS Compliant D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G D S (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 73 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 66 A Continuous (Ta

5.5. fdd8878_fdu8878.pdf Size:400K _fairchild_semi

0 April 2008 FDD8878 / FDU8878 tm N-Channel PowerTrench® MOSFET 30V, 40A, 15m? General Description Features This N-Channel MOSFET has been designed specifically to rDS(ON) = 15m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM rDS(ON) = 18.5m?, VGS = 4.5V, ID = 35A controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. High performance trench technology for extremely low rDS(ON) Low gate charge Application DC / DC Converters High power and current handling capability RoHS Compliant D D G G S I-PAK D-PAK (TO-251AA) (TO-252) S G D S www.fairchildsemi.com ©2008 Fairchild Semiconductor Corporation 1 FDD8878 / FDU8878 Rev. A4 FDD8878 / FDU8878 N-Channel PowerTrench MOSFET ® Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±2

5.6. fdd8870_fdu8870.pdf Size:486K _fairchild_semi

April 2008 tm FDD8870 / FDU8870 N-Channel PowerTrench® MOSFET 30V, 160A, 3.9m? General Description Features This N-Channel MOSFET has been designed specifically to • rDS(ON) = 3.9m?, VGS = 10V, ID = 35A improve the overall efficiency of DC/DC converters using • rDS(ON) = 4.4m?, VGS = 4.5V, ID = 35A either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low • High performance trench technology for extremely low rDS(ON) and fast switching speed. rDS(ON) • Low gate charge Applications • High power and current handling capability • DC/DC converters D D G G I-PAK S (TO-251AA) D-PAK TO-252 S G D S (TO-252) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDSS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current 160 A Continuous (TC = 25oC, VGS = 10V) (Note 1) ID Continuous (TC = 25oC, VGS = 4.5V) (Note 1) 150 A Continuous (Tamb = 25oC, VGS = 1

See also transistors datasheet: FDD8878 , FDD8878 , FDD8880 , FDD8880 , FDD8882 , FDD8882 , FDD8896 , FDD8896 , 2N7001 , FDD8896_F085 , FDD8N50NZ , FDG1024NZ , FDG327N , FDG327NZ , FDG328P , FDG330P , FDG332PZ .

Keywords