FDG6318P MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDG6318P

Type of FDG6318P transistor: MOSFET

Type of control channel: P -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 0.5

Maximum junction temperature (Tj), °C:

Rise Time of FDG6318P transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.78

Package: SC70

Equivalent transistors for FDG6318P

FDG6318P PDF documents for downloads:

1.1. fdg6318p.pdf Size:123K _fairchild_semi

January 2003 FDG6318P Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode • –0.5 A, –20 V. RDS(ON) = 780 m? @ VGS = –4.5 V MOSFET are produced using Fairchild Semiconductor’s RDS(ON) = 1200 m? @ VGS = –2.5 V advanced PowerTrench process that has been especially tailored to minimize on-state resistance. This device has been designed especially for low voltage • Very low level gate drive requirements allowing direct applications as a replacement for bipolar digital transistors and small signal MOSFETS. operation in 3V circuits (VGS(th) < 1.5V). Applications • Compact industry standard SC70-6 surface mount package • Battery management S G S D 1 or 4 6 or 3 D G G 2 or 5 5 or 2 D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Sourc

4.1. fdg6317nz.pdf Size:344K _fairchild_semi

May 2009 FDG6317NZ Dual 20v N-Channel PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed • 0.7 A, 20 V. RDS(ON) = 400 m? @ VGS = 4.5 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 550 m? @ VGS = 2.5 V converters using either synchronous or conventional switching PWM controllers. It has been optimized use • Gate-Source Zener for ESD ruggedness in small switching regulators, providing an extremely (1.6kV Human Body Model). (Note 3) low RDS(ON) and gate charge (QG) in a small package. • Low gate charge Applications • High performance trench technology for extremely • DC/DC converter low RDS(ON) • Power management • Compact industry standard SC70-6 surface mount • Load switch package • RoHS Compliant S G D D G Pin 1 S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Sourc

4.2. fdg6316p.pdf Size:149K _fairchild_semi

December 2001 FDG6316P ? ? ? P-Channel 1.8V Specified PowerTrench? MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses • –0.7 A, –12 V. RDS(ON) = 270 m? @ VGS = –4.5 V Fairchild’s advanced low voltage PowerTrench process. RDS(ON) = 360 m? @ VGS = –2.5 V It has been optimized for battery power management RDS(ON) = 650 m? @ VGS = –1.8 V applications. • Low gate charge Applications • High performance trench technology for extremely • Battery management low RDS(ON) • Load switch • Compact industry standard SC70-6 surface mount package S G S D 1 or 4 6 or 3 D G G 2 or 5 5 or 2 D G 4 or 1 Pin 1 D 3 or 6 S S SC70-6 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDSS Drain-Source Voltage –12 V VGSS Gate-Source Voltage ± 8 V ID Drain Current – Continuous (Note 1) –0.7 A – Pulsed –1.8 PD Power Dissipat

See also transistors datasheet: FDG330P , FDG332PZ , FDG410NZ , FDG6301N_F085 , FDG6306P , FDG6308P , FDG6316P , FDG6317NZ , IRFBC40 , FDG6318PZ , FDG6320C , FDG6320C , FDG6321C , FDG6321C , FDG6322C , FDG6322C , FDG6332C .

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