2N6762JTXV MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: 2N6762JTXV

Type of 2N6762JTXV transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W: 75

Maximum drain-source voltage |Uds|, V: 500V

Maximum gate-source voltage |Ugs|, V: 20

Maximum drain current |Id|, A: 4.5

Maximum junction temperature (Tj), °C: 150

Rise Time of 2N6762JTXV transistor (tr), nS:

Drain-source Capacitance (Cd), pF: 800

Maximum drain-source on-state resistance (Rds), Ohm: 3.3

Package: TO204

Equivalent transistors for 2N6762JTXV

2N6762JTXV PDF documents for downloads:

4.1. 2n6762_irf430.pdf Size:146K _international_rectifier

PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET?TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 ? 4.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- TO-3 verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switching Hermetically Sealed power supplies, motor controls, inverters, choppers, aud

5.1. 2n6767.pdf Size:140K _fairchild_semi

5.2. 2n6761.pdf Size:137K _fairchild_semi

5.3. 2n6765.pdf Size:142K _fairchild_semi

5.4. 2n6763.pdf Size:140K _fairchild_semi

5.5. 2n6769.pdf Size:137K _fairchild_semi

5.6. 2n6768_irf350.pdf Size:144K _international_rectifier

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET?TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300? 14A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, Repetitive Avalanche Ratings very fast switching, ease of paralleling and temperature Dynamic dv/dt Rating stability of the electrical parameters. Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor contro

5.7. 2n6766_irf250.pdf Size:145K _international_rectifier

PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET?TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085? 30A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- Features: lished advantages of MOSFETs such as voltage control, very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating Hermetically Sealed They are well suited for applications such as switching Simple Drive Requirements power supplies, motor control

5.8. 2n6760_irf330.pdf Size:146K _international_rectifier

PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET?TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00? 5.5A The HEXFET?technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resis- TO-3 tance combined with high transconductance; superior re- verse energy and diode recovery dv/dt capability. The HEXFET transistors also feature all of the well estab- lished advantages of MOSFETs such as voltage control, Features: very fast switching, ease of paralleling and temperature Repetitive Avalanche Ratings stability of the electrical parameters. Dynamic dv/dt Rating They are well suited for applications such as switching Hermetically Sealed power supplies, motor controls, inverters, choppers, audi

5.9. 2n6764_2n6766_2n6768_2n6770.pdf Size:64K _omnirel

2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES •Low RDS(on) •Ease of Paralleling •Qualified to MIL-PRF-19500/543 DESCRIPTION This hermetically packaged QPL product features the latest advanced MOSFET technology. It is ideally suited for Military requirements where small size, high performance and high reliability are required, and in applications such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high energy pulse circuits. PRIMARY ELECTRICAL CHARACTERISTICS @ TC= 25°C PART NUMBER VDS, Volts RDS(on) ID, Amps 2N6764 100 .055 38 2N6766 200 .085 30 2N6768 400 .30 14 2N6770 500 .40 12 SCHEMATIC MECHANICAL OUTLINE 1.197 1.53 REF. 1.177 0.675 0.875 0.440 0.655 0.188 R.

See also transistors datasheet: 2N6760JTX , 2N6760JTXV , 2N6761 , 2N6762 , 2N6762JAN , 2N6762JANTX , 2N6762JANTXV , 2N6762JTX , J111 , 2N6763 , 2N6764 , 2N6764JAN , 2N6764JANTX , 2N6764JANTXV , 2N6764JTX , 2N6764JTXV , 2N6765 .

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