FDMA1024NZ MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDMA1024NZ

Type of FDMA1024NZ transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 20V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 5.0

Maximum junction temperature (Tj), °C:

Rise Time of FDMA1024NZ transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.054

Package: MicroFET

Equivalent transistors for FDMA1024NZ

FDMA1024NZ PDF documents for downloads:

1.1. fdma1024nz.pdf Size:402K _fairchild_semi

May 2010 FDMA1024NZ Dual N-Channel PowerTrench® MOSFET 20 V, 5.0 A, 54 m? Features General Description Max rDS(on) = 54 m? at VGS = 4.5 V, ID = 5.0 A This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other Max rDS(on) = 66 m? at VGS = 2.5 V, ID = 4.2 A ultra-portable applications. It features two independent Max rDS(on) = 82 m? at VGS = 1.8 V, ID = 2.3 A N-Channel MOSFETs with low on-state resistance for minimum conduction losses. Max rDS(on) = 114 m? at VGS = 1.5 V, ID = 2.0 A The MicroFET 2X2 package offers exceptional thermal HBM ESD protection level = 1.6 kV (Note 3) performance for its physical size and is well suited to linear mode Low profile - 0.8 mm maximum - in the new package applications. MicroFET 2x2 mm Applications RoHS Compliant Baseband Switch Free from halogenated compounds and antimony oxides Loadswitch DC-DC Conversion PIN 1 S1 G1 D2 S1 1 6 D1 D1 D

3.1. fdma1027pt.pdf Size:379K _fairchild_semi

May 2009 FDMA1027PT Dual P-Channel PowerTrench® MOSFET –20 V, –3 A, 120 m? Features General Description This device is designed specifically as a single package solution Max rDS(on) = 120 m? at VGS = -4.5 V, ID = -3.0 A for the battery charge switch in cellular handset and other Max rDS(on) = 160 m? at VGS = -2.5 V, ID = -2.5 A ultra-portable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum Max rDS(on) = 240 m? at VGS = -1.8 V, ID = -1.0 A conduction losses. When connected in the typical common Low profile - 0.55 mm maximum - in the new package source configuration, bi-directional current flow is possible. MicroFET 2x2 Thin The MicroFET 2x2 Thin package offers exceptional thermal RoHS Compliant performance for it's physical size and is well suited to linear mode applications. Free from halogenated compounds and antimony oxides Applications Battery management Load switch Battery protection

3.2. fdma1029pz.pdf Size:256K _fairchild_semi

May 2009 tmtm FDMA1029PZ Dual P-Channel PowerTrench MOSFET General Description Features This device is designed specifically as a single package –3.1 A, –20V. RDS(ON) = 95 m @ VGS = –4.5V solution for the battery charge switch in cellular handset RDS(ON) = 141 m @ VGS = –2.5V and other ultra-portable applications. It features two Low profile – 0.8 mm maximum – in the new package independent P-Channel MOSFETs with low on-state MicroFET 2x2 mm resistance for minimum conduction losses. When HBM ESD protection level > 2.5kV (Note 3) connected in the typical common source configuration, RoHS Compliant bi-directional current flow is possible. The MicroFET 2x2 package offers exceptional thermal Free from halogenated compounds and antimony performance for its physical size and is well suited to oxides linear mode applications. PIN 1 S1 G1 D2 D1 D2 D1 S1 1 6 G1 2 5 G2 D1 G2 S2 D2 3 4 S2 MicroFET 2x2 Absolute Maxim

3.3. fdma1025p.pdf Size:339K _fairchild_semi

May 20 FDMA1025P tm Dual P-Channel PowerTrench® MOSFET –20V, –3.1A, 155m? Features General Description Max rDS(on) = 155m? at VGS = –4.5V, ID = –3.1A This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra - Max rDS(on) = 220m? at VGS = –2.5V, ID = –2.3A portable applications. It features two independent P-Channel Low profile - 0.8mm maximum - in the new package MicroFET MOSFETs with low on-state resistance for minimum conduction 2X2 mm losses. When connected in the typical common source configuration, bi-directional current flow is possible. RoHS Compliant The MicroFET 2X2 package offers exceptional thermal Free from halogenated compounds and antimony performance for its physical size and well suited to linear mode oxides applications. Application DC - DC Conversion PIN 1 S1 G1 D2 1 6 S1 D1 D2 D1 5 G2 G1 2 D2 4 S2 3 D1 G2 S2 MicroFET 2X2 MOSFET Maximum Ratin

3.4. fdma1028nz.pdf Size:321K _fairchild_semi

t October 2010 tm FDMA1028NZ Dual N-Channel PowerTrench? MOSFET General Description Features • 3.7 A, 20V. RDS(ON) = 68 m? @ VGS = 4.5V This device is designed specifically as a single package RDS(ON) = 86 m? @ VGS = 2.5V solution for dual switching requirements in cellular Low profile – 0.8 mm maximum – in the new package • handset and other ultra-portable applications. It MicroFET 2x2 mm features two independent N-Channel MOSFETs with low on-state resistance for minimum conduction losses. • HBM ESD protection level > 2kV (Note 3) The MicroFET 2x2 package offers exceptional thermal • RoHS Compliant performance for its physical size and is well suited to Free from halogenated compounds and antimony linear mode applications. oxides PIN 1 S1 G1 D2 D1 D2 S1 D1 1 6 G1 2 5 G2 D1 G2 S2 D2 3 4 S2 MicroFET 2x2 Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage 20 V VGS

3.5. fdma1023pz.pdf Size:417K _fairchild_semi

May 2009 FDMA1023PZ tm Dual P-Channel PowerTrench® MOSFET –20V, –3.7A, 72m? Features General Description Max rDS(on) = 72m? at VGS = –4.5V, ID = –3.7A This device is designed specifically as a single package solution for the battery charge switch in cellular handset Max rDS(on) = 95m? at VGS = –2.5V, ID = –3.2A and other ultra-portable applications. It features two independent Max rDS(on) = 130m? at VGS = –1.8V, ID = –2.0A P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common Max rDS(on) = 195m? at VGS = –1.5V, ID = –1.0A source configuration, bi-directional current flow is possible. Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode HBM ESD protection level > 2kV typical (Note 3) applications. RoHS Compliant Free from halogenated compounds and antimony

See also transistors datasheet: FDI3632 , FDI8441 , FDI8441_F085 , FDL100N50F , FDM3622 , FDM3622 , FDMA0104 , FDMA1023PZ , RFP50N06 , FDMA1025P , FDMA1027P , FDMA1027PT , FDMA1028NZ , FDMA1029PZ , FDMA1032CZ , FDMA1032CZ , FDMA2002NZ .

Keywords