FDMC7660DC MOSFET transistor datasheet. Parameters and characteristics.

Type Designator: FDMC7660DC

Type of FDMC7660DC transistor: MOSFET

Type of control channel: N -Channel

Maximum power dissipation (Pd), W:

Maximum drain-source voltage |Uds|, V: 30V

Maximum gate-source voltage |Ugs|, V:

Maximum drain current |Id|, A: 40.0

Maximum junction temperature (Tj), °C:

Rise Time of FDMC7660DC transistor (tr), nS:

Drain-source Capacitance (Cd), pF:

Maximum drain-source on-state resistance (Rds), Ohm: 0.0022

Package: DualCool3x3

Equivalent transistors for FDMC7660DC

FDMC7660DC PDF documents for downloads:

1.1. fdmc7660dc.pdf Size:283K _fairchild_semi

January 2011 FDMC7660DC N-Channel Dual CoolTM PowerTrench® MOSFET 30 V, 40 A, 2.2 m? Features General Description Dual CoolTM Top Side Cooling PQFN package This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Max rDS(on) = 2.2 m? at VGS = 10 V, ID = 22 A Advancements in both silicon and Dual CoolTM package Max rDS(on) = 3.3 m? at VGS = 4.5 V, ID = 18 A technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely High performance technology for extremely low rDS(on) low Junction-to-Ambient thermal resistance. SyncFET Schottky Body Diode Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Telecom Secondary Side Rectification High End Server/Workstation Pin 1 G S S S D 5 4 G D 6 S 3 D S D 7 2 D D D 8 1 S D Top Bottom Power 33 MOSFET Maximum Ratings TA= 25°C unless otherwise noted Symbol Parameter Ratings Units VDS D

2.1. fdmc7660.pdf Size:250K _fairchild_semi

December 2009 FDMC7660 N-Channel PowerTrench® MOSFET 30 V, 20 A, 2.2 m Features General Description Max rDS(on) = 2.2 m at VGS = 10 V, ID = 20 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has Max rDS(on) = 3.3 m at VGS = 4.5 V, ID = 18 A been especially tailored to minimize the on-state resistance. This High performance technology for extremely low rDS(on) device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Termination is Lead-free and RoHS Compliant Battery Packs. Applications DC - DC Buck Converters Point of Load High Efficiency Load Switch and Low Side Switching Pin 1 S S S G D 5 4 G D 6 3 S D D 7 2 S D D D 8 1 D S Top Bottom Power 33 MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage (Note 4) ±20 V Drain Curren

2.2. fdmc7660s.pdf Size:371K _fairchild_semi

December 2009 FDMC7660S N-Channel Power Trench® SyncFET™ 30 V, 20 A, 2.2 m? Features General Description Max rDS(on) = 2.2 m? at VGS = 10 V, ID = 20 A The FDMC7660S has been designed to minimize losses in power conversion applications. Advancements in both silicon Max rDS(on) = 2.95 m? at VGS = 4.5 V, ID = 18 A and package technologies have been combined to offer the High performance technology for extremely low rDS(on) lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient Termination is Lead-free and RoHS Compliant monolithic Schottky body diode. Applications Synchronous Rectifier for DC/DC Converters Notebook Vcore/GPU low side switch Networking Point of Load low side switch Telecom secondary side rectification Pin 1 S S D G 5 4 S G D S 6 3 D S 7 2 D D S D D 8 1 D Top Bottom Power 33 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol Parameter Ratings Units

See also transistors datasheet: FDMC6675BZ , FDMC6679AZ , FDMC6890NZ , FDMC7570S , FDMC7572S , FDMC7660 , FDMC7660 , FDMC7660DC , IRFZ44V , FDMC7660S , FDMC7660S , FDMC7664 , FDMC7664 , FDMC7672 , FDMC7672 , FDMC7672S , FDMC7672S .

Keywords